@article{ART000906897},
author={BeongJuKim},
title={Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2002},
volume={12},
number={6},
pages={299-303}

TY - JOUR
AU - BeongJuKim
TI - Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2002
VL - 12
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 299
EP - 303
SN - 1225-1429
AB -
KW -
DO -
UR -
ER -

BeongJuKim. (2002). Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 12(6), 299-303.

BeongJuKim. 2002, "Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy", Journal of the Korean Crystal Growth and Crystal Technology, vol.12, no.6 pp.299-303.

BeongJuKim "Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 12.6 pp.299-303 (2002) : 299.

BeongJuKim. Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy. 2002; 12(6), 299-303.

BeongJuKim. "Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 12, no.6 (2002) : 299-303.

BeongJuKim. Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 12(6), 299-303.

BeongJuKim. Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology. 2002; 12(6) 299-303.

BeongJuKim. Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy. 2002; 12(6), 299-303.

BeongJuKim. "Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 12, no.6 (2002) : 299-303.