Korean | English

pISSN : 1225-1429 / eISSN : 2234-5078

2019 KCI Impact Factor : 0.26
Home > Explore Content > All Issues > Article View
7 of 11

Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2002, 12(6), pp.304-310
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

Soon-HyukHong 1 Kwang-YellSeo 2

1Kwangwoon University
2Kwangwoon University

등재

Statistics

icon76 Viewed

Tools

iconPrint this page

iconSearch PDF

Search PDF

Close X