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High rate dry etching of Si in fluorine-based inductively coupled plasmas

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2004, 14(5), pp.220-225
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

조현 1 S.J. Pearton 2

1밀양대학교
2University of Florida

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