Conditions of Skull melting system for rutile single crystals growth
[journal] / 2003 / Photocatalytic decomposition of acetaldehyde under visible light irradiation over La3+ and N co-doped TiO2? 32(12)
[journal] / 2003 / Optical crystals survived in information technology systems? 11(2)
[journal] / 2004 / High-speed float zone growth of rutile single crystals inclined at 48o to the c-axis? 269
[journal] / 2001 / Growth of TiO2 (rutile) single crystal by FZ method under high oxygen pressure? 11(3)
[journal] / 1991 / Difficulties encountered during the Czochralski growth of TiO2 single crystals?
[journal] / 1997 / Unstable forming of rutile crystal grown by EFG method?
[journal] / 2004 / Characteristics of rutile single crystals grown under two different oxygen partial pressures? 268
[journal] / 1999 / Growth of rutile single crystals by the pulling-down method? 230
[journal] / 1980 / ?Instability phenomena during the RF heating and melting of ceramics?
[journal] / 1979 / ?Electrodynamic convection in silicon floating zones? krTable 3Variation of frequency and penetration depth with work coil turns and size as a function of tank capacity Dependence of heating efficiency with skin depth Photographs of cross section of the ingots grown after keeping the melting time for 2 inner diameter of cold crucible Photographs of cross section of the ingots grown after keeping the melting time for 2 inner diameter of cold crucible Change of solid-liquid interface with cold-crucible diameter Photographs of cross section of ingots obtained by various tank capacitors Change of initial solid-liquid interface and isothermal line with frequency Photograph of cross section of ingot Initial solid-liquid interface and isothermal line of ingot grown by semi-conductor RF generator : 9 91 12 48~