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Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2008, 18(3), pp.97-100
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

오동근 1 Bonggeun Choi 2 Kwang Bo Shim 3 Sung Yi 4 정진현 5 이성국 6 Van Thi Ha Lai 7

1한양대학교
2한양대학교
3한양대학교
4한양대학교
5유니모테크놀로지
6한양대학교
7한양대학교

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