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Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2009, 19(1), pp.6-10
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

홍상현 1 전헌수 2 한영훈 3 김은주 4 이아름 5 KYOUNG HWA KIM 6 SUNLYEONG HWANG 7 하홍주 8 Hyung Soo Ahn 9 Min Yang 10

1한국해양대학교
2한국해양대학교
3한국해양대학교
4한국해양대학교
5한국해양대학교
6한국해양대학교
7한국해양대학교
8한국해양대학교
9한국해양대학교
10한국해양대학교

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