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Control of carrier concentrations by addition of B2O3 in Si-doped vertical gradient freeze (VGF) GaAs single crystal growth

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2009, 19(2), pp.75-78
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

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