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Early stage of heteroepitaxial Ge growth on Si(100) substrate with surface treatments using inductively coupled plasma (ICP)

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2011, 21(4), pp.153-157
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

Hyundeok Yang 1 Yeon-Ho Kil 2 Shim Kyu Hwan 3 최철종 4

1전북대학교
2전북대학교
3전북대학교
4전북대학교

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