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Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2014, 24(3), pp.89-93
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

하주영 1 Mi Seon Park 2 Lee, Won Jae 3 Young Jun Choi 4 Hae Yong Lee 5

1동의대학교
2동의대학교
3동의대학교
4(주)루미지엔테크
5(주)루미지엔테크

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