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The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2015, 25(2), pp.56-61
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

하주형 1 Mi-Seon Park 2 Lee, Won Jae 3 Young Jun Choi 4 Hae Yong Lee 5

1동의대학교
2동의대학교
3동의대학교
4(주)루미지엔테크
5(주)루미지엔테크

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