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Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2016, 26(3), pp.89-94
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

LEEWONJUN 1 Mi-Seon Park 2 Jang, Yeon-Suk 3 Lee, Won Jae 4 하주형 5 Young Jun Choi 6 Hae Yong Lee 7 Hong Seung Kim 8

1동의대학교
2동의대학교
3동의대학교
4동의대학교
5(주)루미지엔테크
6(주)루미지엔테크
7(주)루미지엔테크
8한국해양대학교

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