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Parametric study of inductively coupled plasma etching of GaN epitaxy layer

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2016, 26(4), pp.145-149
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

Choi ByoungSu 1 박해리 2 Cho, Hyun 3

1부산대학교
2부산대학교
3부산대학교

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