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Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2019, 29(4), pp.173-178
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

Hoki Son 1 Ye-ji Choi 2 이영진 3 Jinho Kim 4 Sun Woog Kim 5 Ra, Yong-Ho 6 Tae-Young Lim 7 Jonghee Hwang 8 Ra, Yong-Ho 9

1한국세라믹기술원
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