Korean | English

pISSN : 1225-1429 / eISSN : 2234-5078

2019 KCI Impact Factor : 0.26
Home > Explore Content > All Issues > Article View
3 of 6

Properties of AlN epilayer grown on 6H-SiC substrate by mixed-source HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2020, 30(3), pp.96-102
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Materials Science and Engineering

ParkJunghyun 1 KYOUNG HWA KIM 2 Jeon Injun 3 Hyung Soo Ahn 4 Min Yang 5 Sam Nyung Yi 6 Cho, Chae-Ryong 7 Kim Suck Whan 8

1한국해양대학교
2한국해양대학교 화합물반도체공정교육센터
3부산대학교
4한국해양대학교
5한국해양대학교
6한국해양대학교
7부산대학교
8안동대학교

등재

Statistics

icon65 Viewed

Tools

iconPrint this page

iconDownload PDF

Search PDF

Close X