In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy(MS-HVPE). AlN epilayer of 0.5 m thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayergrown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energydispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A finecrystalline AlN epilayer with screw dislocation density of 1.4 × 109cm2and edge dislocation density of 3.8 × 109cm2wasconfirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied topower devices.