Ring-shaped SiC (Silicon carbide) polycrystals used as an inner material in semiconductor etching equipmentwas manufactured using the PVT (Physical Vapor Transport) method. A graphite cylinder structure was placed inside thegraphite crucible to grow a ring-shaped SiC polycrystal by the PVT method. The crystal polytype of grown crystal wereanalyzed using a Raman and an UVF (Ultra Violet Fluorescence) analysis. And the microstructure and components of SiCcrystal were identified by a SEM (Scanning Electron Microscope) and EDS (Energy Disruptive Spectroscopy) analyses. Thegrain size and growth rate of SiC polycrystals fabricated by this method was varied with temperature variation in the initialstage of growth process.