Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 m werefabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %,20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films werecoated on silicon substrate and annealed at 700oC. On the other hand, the PZN-added PZT film showed higher remanentpolarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at900oC. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900oC were comparedwith the result values obtained from bulk ceramic specimen with same composition sintered at 1200oC. As annealingtemperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by postheat treatment.