Gallium oxide nano-powder, the key starting material for IGZO target, is fabricated by gas phase synthesis usinga new apparatus consist of reaction, transportation, and collection parts. As a result of gallium metal evaporation above1150oC, Ga2O3 nano-powders, are successfully synthesized. The SEM images of the synthesized powders displace the sphericalshaped powders without severe agglomeration. X-ray diffraction and PSA analysis show that the higher temperature at thereaction part results in the better crystallinity and larger powder size of the synthesized Ga2O3. To see the applicability toIGZO target, Ga2O3 nano-powders synthesized at 1250°C are mixed with indium oxide and zinc oxide (In2O3 : Ga2O3 : ZnO=1 : 1 : 1), and then sintered at 1400~1500oC. The highest sintered density of 5.83 g/cm3(= 91 % of relative density) is achieved when sintered at 1450oC, showing better sinterability compared to the commercially available Ga2O3 powder, which has 5.61 g/cm3of sintered density at the same condition.