Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the depositionconditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600°C in an N2 atmosphere.
The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD patternanalysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002)plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thinfilms formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, astrong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping,only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed thatthe grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thinfilm with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4×10-4 Ω·cm. In the case of asingle thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistancedecreased as the thickness of the Ga-doped ZnO thin film increased to 2μm, showing relatively a low specific resistanceof 1.0×10-3 Ω·cm