Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method ofmixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method,nuclei are formed by the interaction between GaCln, AlCln and SiCln gases at a high temperature of 1200°C. In addition, itis designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. Theproperties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive Xrayspectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expectedto be applied as a new material in the Si industry.