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Graphene field-effect transistor for radio-frequency applications : review

  • Carbon Letters
  • Abbr : Carbon Lett.
  • 2012, 13(1), pp.17-22
  • Publisher : Korean Carbon Society
  • Research Area : Natural Science > Natural Science General > Other Natural Sciences General

Jeong-Sun Moon 1

1HRL Laboratories LLC

Accredited

ABSTRACT

Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers,the unique ambipolar nature of graphene field-effect transistors can be utilized for highperformance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

Citation status

This is the result of checking the information with the same ISSN, publication year, volume, and start page between the WoS and the KCI journals. (as of 2023-01-02)

Total Citation Counts(KCI+WOS) (9) This is the number of times that the duplicate count has been removed by comparing the citation list of WoS and KCI.

* References for papers published after 2023 are currently being built.