@article{ART001706764},
author={조현진 and Changhyup Lee and In Seoup Oh and Sungchan Park and Hwan Chul Kim and 김명종},
title={Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene},
journal={Carbon Letters},
issn={1976-4251},
year={2012},
volume={13},
number={4},
pages={205-211},
doi={10.5714/CL.2012.13.4.205}
TY - JOUR
AU - 조현진
AU - Changhyup Lee
AU - In Seoup Oh
AU - Sungchan Park
AU - Hwan Chul Kim
AU - 김명종
TI - Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene
JO - Carbon Letters
PY - 2012
VL - 13
IS - 4
PB - Korean Carbon Society
SP - 205
EP - 211
SN - 1976-4251
AB - Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition.
Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope,transmission electron microscope, atomic force microscope, four-point-probe measurement,and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity.
From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.
KW - graphene;synthesis;methanol;low pressure chemical vapor deposition;large area
DO - 10.5714/CL.2012.13.4.205
ER -
조현진, Changhyup Lee, In Seoup Oh, Sungchan Park, Hwan Chul Kim and 김명종. (2012). Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene. Carbon Letters, 13(4), 205-211.
조현진, Changhyup Lee, In Seoup Oh, Sungchan Park, Hwan Chul Kim and 김명종. 2012, "Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene", Carbon Letters, vol.13, no.4 pp.205-211. Available from: doi:10.5714/CL.2012.13.4.205
조현진, Changhyup Lee, In Seoup Oh, Sungchan Park, Hwan Chul Kim, 김명종 "Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene" Carbon Letters 13.4 pp.205-211 (2012) : 205.
조현진, Changhyup Lee, In Seoup Oh, Sungchan Park, Hwan Chul Kim, 김명종. Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene. 2012; 13(4), 205-211. Available from: doi:10.5714/CL.2012.13.4.205
조현진, Changhyup Lee, In Seoup Oh, Sungchan Park, Hwan Chul Kim and 김명종. "Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene" Carbon Letters 13, no.4 (2012) : 205-211.doi: 10.5714/CL.2012.13.4.205
조현진; Changhyup Lee; In Seoup Oh; Sungchan Park; Hwan Chul Kim; 김명종. Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene. Carbon Letters, 13(4), 205-211. doi: 10.5714/CL.2012.13.4.205
조현진; Changhyup Lee; In Seoup Oh; Sungchan Park; Hwan Chul Kim; 김명종. Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene. Carbon Letters. 2012; 13(4) 205-211. doi: 10.5714/CL.2012.13.4.205
조현진, Changhyup Lee, In Seoup Oh, Sungchan Park, Hwan Chul Kim, 김명종. Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene. 2012; 13(4), 205-211. Available from: doi:10.5714/CL.2012.13.4.205
조현진, Changhyup Lee, In Seoup Oh, Sungchan Park, Hwan Chul Kim and 김명종. "Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene" Carbon Letters 13, no.4 (2012) : 205-211.doi: 10.5714/CL.2012.13.4.205