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Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene

조현진 1 Changhyup Lee 2 In Seoup Oh 2 Sungchan Park 3 Hwan Chul Kim 1 김명종 4

1전북대학교
2Korea Institute of Science and Technology
3Chonbuk National University
4한국과학기술연구원

Accredited

ABSTRACT

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope,transmission electron microscope, atomic force microscope, four-point-probe measurement,and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

Citation status

This is the result of checking the information with the same ISSN, publication year, volume, and start page between the WoS and the KCI journals. (as of 2023-01-02)

Total Citation Counts(KCI+WOS) (12) This is the number of times that the duplicate count has been removed by comparing the citation list of WoS and KCI.

* References for papers published after 2023 are currently being built.