Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

Zhang Ling; Xing Houying; Yang Meiqing; Dong Qizhi; Li Huimin; Liu Song

doi:10.1007/s42823-022-00367-1

Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

Carbon Letters
Abbr : Carbon Lett.
2022, 32(5), pp.1247-1264
DOI : 10.1007/s42823-022-00367-1
Publisher : Korean Carbon Society
Research Area : Natural Science > Natural Science General > Other Natural Sciences General
Received : May 9, 2022
Accepted : June 15, 2022
Published : August 1, 2022

Zhang Ling ¹, Xing Houying ¹, Yang Meiqing ², Dong Qizhi ¹, Li Huimin ¹, Liu Song ¹

¹Hunan University
²College of Life and Environmental Science, Hunan University of Arts and Science, Changde

Accredited

ABSTRACT

Molybdenum disulfide (MoS2) has been one of the most promising members of transition-metal dichalcogenides materials. Attributed to the excellent electrical performance and special physical properties, MoS2 has been broadly applied in semiconductor devices, such as field effect transistors (FETs). At present, the exploration of further improving the performance of MoS2-based FETs (such as increasing the carrier mobility and scaling) has encountered a bottleneck, and the application of high-κ gate dielectrics has become an effective approach to change this situation. Atomic layer deposition (ALD) enables high-quality integration of MoS2 and high-κ gate dielectrics at the atomic level. In this review, we summarize recent advances in the fabrication of two-dimensional MoS2 FETs using ALD high-κ materials as gate dielectrics. We first briefly discuss the research background of MoS2 FETs. Second, we expound the electrical and other essential properties of high-κ gate dielectrics, which are essential to the performance of MoS2 FETs. Finally, we focus on the advances in fabricating MoS2 FETs with ALD high-κ gate dielectrics on MoS2, as well as the optimized ALD processes. In addition, we also look forward to the development prospect of this field.

KEYWORDS

High-κ materials, Atomic layer deposition (ALD), Gate dielectrics, MoS2, Field effect transistors (FETs)

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Carbon Letters 2023 KCI Impact Factor : 1.35 KCI-WoS Impact Factor : 6.04

Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

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This is the result of checking the information with the same ISSN, publication year, volume, and start page between the WoS and the KCI journals. (as of 2024-07-26)

Total Citation Counts(KCI+WOS) (9) This is the number of times that the duplicate count has been removed by comparing the citation list of WoS and KCI.

Scopus Citation Counts (8) This is the result of checking the information with the same ISSN, publication year, volume, and start page between articles in KCI and the SCOPUS journals. (as of 2024-10-01)

* References for papers published after 2023 are currently being built.

Carbon Letters 2023 KCI Impact Factor : 1.35 KCI-WoS Impact Factor : 6.04

Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

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WoS Citation Counts (7) This is the result of checking the information with the same ISSN, publication year, volume, and start page between the WoS and the KCI journals. (as of 2024-07-26)

Total Citation Counts(KCI+WOS) (9) This is the number of times that the duplicate count has been removed by comparing the citation list of WoS and KCI.

Scopus Citation Counts (8) This is the result of checking the information with the same ISSN, publication year, volume, and start page between articles in KCI and the SCOPUS journals. (as of 2024-10-01)

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