@article{ART003273797},
author={Li Mingke and Yu Dayang and Shen Shengnan and Liu Xin},
title={Review of n-type doping diamond: methods, elements, and properties},
journal={Carbon Letters},
issn={1976-4251},
year={2025},
volume={35},
number={5},
pages={1981-2009},
doi={10.1007/s42823-025-00970-y}
TY - JOUR
AU - Li Mingke
AU - Yu Dayang
AU - Shen Shengnan
AU - Liu Xin
TI - Review of n-type doping diamond: methods, elements, and properties
JO - Carbon Letters
PY - 2025
VL - 35
IS - 5
PB - Korean Carbon Society
SP - 1981
EP - 2009
SN - 1976-4251
AB - Doping diamond exhibits excellent photoelectric properties, making it promising for applications in wide-bandgap semiconductors, high-temperature devices, and high-power electronics. However, research on n-type doping remains limited. This paper reviews the main n-type doping methods for diamond: ion implantation (I/I), chemical vapor deposition (CVD), high pressure–high temperature (HPHT), deuterated method (DM), surface charge transfer doping (SCTD), and laser irradiation (LI). It analyzes the parameters, advantages, and disadvantages of each technique while classifying common single-element and multi-element co-doping methods. Single-element dopants include Group IA (Li, Na, K), Group ⅡA (Be, Mg), Group VA (N, P, As, Sb), and Group ⅥA (O, S, Se, Te) elements. Multi-element co-doping often combines B-P, B-S, B-O, and B-N pairs. Additionally, we examine the atomic structures of these dopants, introduce commonly used simulation models, and compare the electronic characteristics of synthesized n-type doping diamonds. Finally, we summarize the challenges of n-type doping diamond in doping equipment, processes, and electronic devices, and propose possible improvements and future development directions.
KW - n-type doping diamond;Doping methods;Doping elements;Electronic properties
DO - 10.1007/s42823-025-00970-y
ER -
Li Mingke, Yu Dayang, Shen Shengnan and Liu Xin. (2025). Review of n-type doping diamond: methods, elements, and properties. Carbon Letters, 35(5), 1981-2009.
Li Mingke, Yu Dayang, Shen Shengnan and Liu Xin. 2025, "Review of n-type doping diamond: methods, elements, and properties", Carbon Letters, vol.35, no.5 pp.1981-2009. Available from: doi:10.1007/s42823-025-00970-y
Li Mingke, Yu Dayang, Shen Shengnan, Liu Xin "Review of n-type doping diamond: methods, elements, and properties" Carbon Letters 35.5 pp.1981-2009 (2025) : 1981.
Li Mingke, Yu Dayang, Shen Shengnan, Liu Xin. Review of n-type doping diamond: methods, elements, and properties. 2025; 35(5), 1981-2009. Available from: doi:10.1007/s42823-025-00970-y
Li Mingke, Yu Dayang, Shen Shengnan and Liu Xin. "Review of n-type doping diamond: methods, elements, and properties" Carbon Letters 35, no.5 (2025) : 1981-2009.doi: 10.1007/s42823-025-00970-y
Li Mingke; Yu Dayang; Shen Shengnan; Liu Xin. Review of n-type doping diamond: methods, elements, and properties. Carbon Letters, 35(5), 1981-2009. doi: 10.1007/s42823-025-00970-y
Li Mingke; Yu Dayang; Shen Shengnan; Liu Xin. Review of n-type doping diamond: methods, elements, and properties. Carbon Letters. 2025; 35(5) 1981-2009. doi: 10.1007/s42823-025-00970-y
Li Mingke, Yu Dayang, Shen Shengnan, Liu Xin. Review of n-type doping diamond: methods, elements, and properties. 2025; 35(5), 1981-2009. Available from: doi:10.1007/s42823-025-00970-y
Li Mingke, Yu Dayang, Shen Shengnan and Liu Xin. "Review of n-type doping diamond: methods, elements, and properties" Carbon Letters 35, no.5 (2025) : 1981-2009.doi: 10.1007/s42823-025-00970-y
