Review of n-type doping diamond: methods, elements, and properties

Mingke Li; Dayang Yu; Shengnan Shen; Xin Liu

doi:10.1007/s42823-025-00970-y

Review of n-type doping diamond: methods, elements, and properties

Carbon Letters
Abbr : Carbon Lett.
2025, 35(5), pp.1981~2009
DOI : 10.1007/s42823-025-00970-y
Publisher : Korean Carbon Society
Research Area : Natural Science > Natural Science General > Other Natural Sciences General
Received : May 2, 2025
Accepted : August 16, 2025
Published : December 11, 2025

Mingke Li ¹, Dayang Yu ¹, Shengnan Shen ¹, Xin Liu ¹

¹Wuhan University

Accredited

ABSTRACT

Doping diamond exhibits excellent photoelectric properties, making it promising for applications in wide-bandgap semiconductors, high-temperature devices, and high-power electronics. However, research on n-type doping remains limited. This paper reviews the main n-type doping methods for diamond: ion implantation (I/I), chemical vapor deposition (CVD), high pressure–high temperature (HPHT), deuterated method (DM), surface charge transfer doping (SCTD), and laser irradiation (LI). It analyzes the parameters, advantages, and disadvantages of each technique while classifying common single-element and multi-element co-doping methods. Single-element dopants include Group IA (Li, Na, K), Group ⅡA (Be, Mg), Group VA (N, P, As, Sb), and Group ⅥA (O, S, Se, Te) elements. Multi-element co-doping often combines B-P, B-S, B-O, and B-N pairs. Additionally, we examine the atomic structures of these dopants, introduce commonly used simulation models, and compare the electronic characteristics of synthesized n-type doping diamonds. Finally, we summarize the challenges of n-type doping diamond in doping equipment, processes, and electronic devices, and propose possible improvements and future development directions.

KEYWORDS

n-type doping diamond, Doping methods, Doping elements, Electronic properties

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[journal] Balmer RS / 2009 / Chemical vapour deposition synthetic diamond: materials, technology and applications / J Phys Condens Matter 21(36) : 364221~

[journal] Ren Y / 2024 / Recent progress in homoepitaxial single-crystal diamond growth via MPCVD / J Mater Sci Mater Electron 35(7) : 525~

[journal] Tsao JY / 2018 / Ultrawide-bandgap semiconductors: research opportunities and challenges / Adv Electron Mater 4(1) : 1600501~

[journal] Zhou H / 2017 / Ultraprecision grinding of silicon wafers using a newly developed diamond wheel / Mater Sci Semicond Process 68 : 238~244

[journal] Kasu M / 2007 / Diamond-based RF power transistors: fundamentals and applications / Diam Relat Mater 16(4-7) : 1010~1015

[journal] Lu T / 2019 / Current status of Chinese synthetic diamonds / J Gemmol 36(8) : 748~757

[journal] Li X / 2020 / Diamond deposition on iron and steel substrates: a review / Micromachines 11(8) : 719~

[journal] Takeyuki T / 2023 / Over 100 μm thickness CVD diamond film with perfectly aligned nitrogen-vacancy centers on highly misoriented substrates / Appl Phys Express 16(2) : 025503~

[journal] Pal'yanov Y / 2001 / High-pressure synthesis and characterization of diamond from a sulfur-carbon system / Diam Relat Mater 10(12) : 2145~2152

[journal] Ali M / 2021 / A comprehensive account of biomedical applications of CVD diamond coatings / J Phys D Appl Phys 54(44) : 443001~

[journal] Martineau PM / 2004 / Identification of synthetic diamond grown using chemical vapor deposition (CVD) / Gems Gemol 40(1) : 2~25

[journal] Lu M / 2025 / Growth mechanisms and material properties of boron-doped single crystal diamond synthesized by HFCVD / Surf Interf 62 : 106217~

[journal] Ma T / 2025 / Study on the uniformity of diamond growth using a dual-substrate MPCVD reactor / Vacuum 237 : 114141~

[journal] Bochechka OO / 2018 / Production of polycrystalline materials by sintering of nanodispersed diamond nanopowders at high pressure. Review / J Superhard Mater 40(5) : 325~334

[journal] Zhi T / 2021 / High quality CVD single crystal diamonds grown on nanorods patterned diamond seed / Diam Relat Mater 119 : 108605~

[journal] Martovitsky VP / 2011 / Heteroepitaxial Ir layers on diamond / J Phys D Appl Phys 44(21) : 215401~

[journal] Yang J / 1995 / Local hetero-epitaxial diamond formed directly on silicon wafers and observed by high-resolution electron microscopy / J Phys D Appl Phys 28(6) : 1153~

[journal] Kwak T / 2021 / Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate / Diam Relat Mater 114 : 108335~

[journal] Kim SW / 2021 / Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (1120) misoriented substrate by step-flow mode / Appl Phys Express 14(11) : 115501~

[journal] Baumann PK / 1998 / Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces / Surf Sci 409(2) : 320~335

[journal] Xin Y / 2025 / Investigation of processing effects on the surface condition of chemical vapor deposition single-crystal diamond by sequential indentation tests / J Mater Eng Perform

[journal] Matsumoto T / 2017 / Diamond Schottky-pn diode using lightly nitrogen-doped layer / Diam Relat Mater 75 : 152~154

[journal] Umzawa H / 2018 / Recent advances in diamond power semiconductor devices / Mater Sci Semicond Process 78 : 147~156

[journal] Liu Y / 2024 / Alkali and alkaline earth metals induced n-type surface transfer doping of diamond: a first-principles calculation / Mater Today Commun 41 : 110882~

[journal] Sultana M / 2025 / N-and P-type doping of diamonds: a review / Mater Sci Semicond Process 186 : 109024~

[journal] Liao M / 2024 / High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond / Adv Sci 11(13) : 2306013~

[journal] Crawford KG / 2018 / Thermally stable, high performance transfer doping of diamond using transition metal oxides / Sci Rep 8 : 3342~

[journal] Wiora N / 2016 / Piezoresistivity of n-type conductive ultrananocrystalline diamond / Diam Relat Mater 70 : 145~150

[journal] Pinault-Thaury MA / 2011 / N-type CVD diamond: epitaxy and doping / Mater Sci Eng B-Adv 176(17) : 1401~1408

[confproc] Chevallier J / 2007 / Different approaches for the n-type doping of diamond / Int Workshop Phys Semicond Dev : 813~818

[journal] Qi D / 2007 / Surface transfer doping of diamond (100) by tetrafluoro-tetracyanoquinodimethane / J Am Chem Soc 129(26) : 8084~8085

[journal] Smith GJ / 2020 / Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma / J Phys D Appl Phys 53(46) : 465204~

[journal] Liu D / 2025 / Unlocking n-type semiconductivity in diamond: a breakthrough approach via surface metal doping / Appl Mater 12(12) : 121118~

[journal] Das D / 2021 / N⁺-ion implantation induced enhanced conductivity in polycrystalline and single crystal diamond / RSC Adv 11(38) : 23686~23699

[journal] Abubakr E / 2022 / Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation / Mater Res Lett 10(10) : 666~674

[journal] Abubakr E / 2022 / Laser-induced novel ohmic contact formation for effective charge collection in diamond detectors / Mater Sci Semicond Process 139 : 106370~

[journal] Hu X / 2011 / The n-type conduction and microstructural properties of phosphorus ion implanted nanocrystalline diamond films / Acta Phys Sin 60(6) : 068101~

[journal] Nasieka I / 2015 / Comprehensive evaluation of the properties of nanocrystalline diamond coatings grown using cvd with e/h field glow discharge stabilization / J Nanomater : 703897~

[journal] Li B / 2025 / Synthesis and characterization of TiP-doped diamond in FeNi-C system under HTHP conditions / CrystEngComm 27 : 6444~6451

[journal] Nakata J / 2025 / Type-n electrical activation of ion-implanted P atoms and unintentionally auto-doped N atoms in the CVD diamond films grown on the HPHT Ib substrates, using C2+, Ne2+, Si2+ MeV-ion irradiations / J Appl Phys 137(13) : 135703~

[journal] Anault JC / 2022 / Chemical vapor deposition single-crystal diamond: a review / Phys Status Solidi. Apid Res Lett 16(1) : 2100354~

[journal] Wu P / 2022 / Radiation damage in (001) diamond induced by phosphorus ion implantation / Phys Status Solidi A 219(7) : 2100829~

[journal] Nelson RS / 1983 / Diamond synthesis: internal growth during C+ ion implantation / Proc R Soc Lond A 386 : 211~222

[journal] Prins JF / 1995 / Ion-implanted n-type diamond: electrical evidence / Diam Relat Mater 4(5-6) : 580~585

[journal] Hoshino Y / 2022 / Local structures of phosphorus atoms implanted in crystalline diamond / J Appl Phys 132(16) : 165704~

[journal] Prins JF / 2000 / N-type semiconducting diamond by means of oxygen-ion implantation / Phys Rev B 61(11) : 7191~7194

[journal] Hu X / 2016 / High mobility n-type conductive ultrananocrystalline diamond and graphene nanoribbon hybridized carbon films / Carbon 98 : 671~680

[journal] Das D / 2021 / Realization of highly conducting n-type diamond by phosphorus ion implantation / Appl Phys Lett 118(10) : 102102~

[journal] Koizumi S / 1998 / Growth and characterization of phosphorus doped n-type diamond thin films / Diam Relat Mater 7(2-5) : 540~544

[journal] Hasegawa M / 1999 / N-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition / Jpn J Appl Phys 38 : L1519~

[journal] Katamune Y / 2020 / N-type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation / Appl Phys A 126(11) : 1~6

[journal] Tallaire A / 2014 / High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates / Diam Relat Mater 41 : 34~40

[journal] Guo Z / 2024 / CVD diamond processing tools: a review / J Adv Res

[journal] Koeck FAM / 2006 / Photo and field electron emission microscopy, from sulfur doped nanocrystalline diamond films / Diam Relat Mater 15(4-8) : 880~883

[journal] Misra DS / 2023 / Studies of dislocations in type Ⅰb, type Ⅱa HPHT and CVD single crystal diamonds / Crystals 13(4) : 657~

[journal] Zhou L / 2008 / Synthesis of industrial diamonds using FeNi alloy powder as catalyst / Chin Phys B 17(12) : 4665~

[journal] Novikov NV / 2003 / Properties of semiconducting diamonds grown by the temperature-gradient method / Diam Relat Mater 12(10-11) : 1990~1994

[journal] Michau D / 1999 / Crystal growth of diamond from a phosphorus solvent under high pressure-high temperature conditions / Diam Relat Mater 8(6) : 1125~1129

[journal] Wang J / 2019 / N-type large single crystal diamond with S doping and B-S co-doping grown in FeNi-C system / Int J Refract Met Hard Mater 81 : 100~110

[journal] Liu X / 2019 / Boron-oxygen complex yields n-type surface layer in semiconducting diamond / Proc Natl Acad Sci USA 116(16) : 7703~7711

[journal] Buga SG / 2024 / Hall measurements on nitrogen-doped Ib-type synthetic single crystal diamonds at temperatures 550-1143 K / Appl Phys Lett 124(10) : 102107~

[journal] Palyanov YN / 2011 / Diamond growth from a phosphorus-carbon system at high pressure high temperature conditions / Cryst Growth Des 11(6) : 2599~2605

[journal] Sun S / 2013 / HPHT synthesis of boron and nitrogen co-doped strip-shaped diamond using powder catalyst with additive h-BN / J Cryst Growth 377 : 22~27

[journal] Saguy C / 2007 / The p-to-n-type conversion of boron-doped diamond layers by deuteration: new findings / Diam Relat Mater 16(8) : 1459~1462

[journal] Teukam Z / 2003 / Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers / Nat Mater 2(7) : 482~486

[journal] Kumar A / 2011 / Boron-deuterium complexes in diamond: how inhomogeneity leads to incorrect carrier type identification / J Appl Phys 110(11) : 033718~

[journal] Sobaszek M / 2023 / Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry / Small 19(26) : 2208265~

[journal] Ristein J / 2006 / Surface transfer doping of diamond / J Phys D Appl Phys 39 : R71~

[journal] Jia S / 2023 / Interfacial charge transfer and electronic structure of diamond/c-BN heterointerface / Comp Mater Sci 218 : 111947~

[journal] Xing B / 2023 / First-principles screening of surface-charge-transfer molecular dopants for n-type diamond / Nanotechnology 34(26) : 265201~

[journal] Liu Y / 2023 / Efficient n-type surface doping in diamond / Phys Chem C 127(1) : 642~648

[journal] Wang X / 2025 / Unveiling n-type surface charge transfer doping of diamond via MgO nanocubes: a first-principles study / Diam Relat Mater 156 : 112419~

[journal] Yang L / 2024 / Surface transfer doping in MoO₃₋ₓ/hydrogenated diamond heterostructure / J Phys Chem Lett 15(6) : 1579~1583

[journal] Glaser NJ / 2020 / Can surface-transfer doping and UV irradiation during annealing improve shallow implanted nitrogen-vacancy centers in diamond? / Appl Phys Lett 117 : 054003~

[journal] Ikeda A / 2015 / Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen / Jpn J Appl Phys 54(4) : 04DP02~

[journal] Abubakr E / 2022 / Formation of p-n⁺ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation / Mater Res Lett 10(10) : 666~674

[journal] Abubakr E / 2021 / Laser-induced phosphorus-doped conductive layer formation on single-crystal diamond surfaces / ACS Appl Mater Interfaces 12(51) : 57619~57626

[journal] Guo L / 2024 / Preparation of n-type and p-type doped single crystal diamonds with laser-induced doping and microwave plasma chemical vapor deposition / ECS Trans 113 : 23~36

[journal] Okada T / 2024 / N-type ion implantation on femtosecond-laser-irradiated diamond surface / Appl Phys A-Mater 130(9) : 629~

[journal] Guo R / 2025 / Phosphorus-doped n-type diamond with high ionization efficiency through high-pressure thermal diffusion / Sci China Mater 68(4) : 1196~1202

[journal] Kalish R / 2001 / The search for donors in diamond / Diam Relat Mater 10(9-10) : 1749~1755

[journal] Chevallier J / 2002 / Hydrogen in n-type diamond / Diam Relat Mater 11(8) : 1566~1571

[journal] Prawer S / 1993 / Can n-type doping of diamond be achieved by Li or Na ion implantation? / Appl Phys Lett 63(18) : 2502~2504

[journal] Borst TH / 1995 / Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growth / Diam Relat Mater 4(7) : 948~953

[journal] Kajihara SA / 1991 / Nitrogen and potential n-type dopants in diamond / Phys Rev Lett 66 : 2010~2013

[journal] Bernholc J / 1992 / Theory of native defects, doping and diffusion in diamond and silicon carbide / Mater Sci Eng B-Adv 11(1-4) : 265~272

[journal] Lombardi EB / 2007 / Li and Na in diamond: a comparison of DFT models / Phys B Condens Matter 401 : 57~61

[journal] Chernyshev VA / 2008 / N-type diamond produced by MeV lithium implantation in channeling direction / Diam Relat Mater 17(11) : 1933~1935

[journal] Zhang D / 2023 / Theoretical study of n-type diamond with Li doping and Li-B co-doping: a density functional simulation / Diam Relat Mater 131 : 109544~

[journal] Liu Y / 2023 / N-type doping of diamond surface by potassium / Diam Relat Mater 140 : 110465~ / https://doi.org/10.1016/j.diamond.2023.110465

[journal] Katayama-Yoshida H / 2001 / Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment / J Phys Condens Matter 13(40) : 8901~

[journal] Yan C / 2009 / Shallow donors in diamond: Be and Mg / Comp Mater Sci 44(4) : 1286~1290

[journal] Corrigan TD / 2002 / The effect of nitrogen addition to Ar/CH4 plasmas on the growth, morphology and field emission of ultrananocrystalline diamond / Diam Relat Mater 11 : 43~48

[journal] Suzuki M / 2009 / Low-temperature thermionic emission from nitrogen-doped nanocrystalline diamond films on n-type Si grown by MPCVD / Diam Relat Mater 18(10) : 1274~1277

[journal] Matsushima Y / 2024 / Fabrication and characterization of diamond (100) p+-i-n+ diodes with heavily nitrogen-doped films / Diam Relat Mater 145 : 111116~

[journal] Okano K / 1996 / Low-threshold cold cathodes made of nitrogen-doped chemical-vapour-deposited diamond / Nature 381(6578) : 140~141

[journal] Basu T / 2025 / Diamond color center based quantum metrology in industries for energy applications / ACS Omega 10(3) : 2372~2392

[journal] Bradac C / 2019 / Quantum nanophotonics with group IV defects in diamond / Nat Commun 10(1) : 5625~

[confproc] Chevallier J / 2005 / Some recent advances on the n-type doping of diamond / Gett Def Eng Semicond Tech Xi 108-109 : 703~708

[journal] Kato H / 2016 / N-type control of single-crystal diamond films by ultra-lightly phosphorus doping / Appl Phys Lett 109(14) : 142102~

[journal] Nakata J / 2024 / Quantitative characterization of occupational sites of implanted P atoms in diamond / J Appl Phys 135(19) : 195705~

[journal] Palynaov YN / 2011 / Diamond growth from a phosphorus-carbon system at high pressure high temperature conditions / Cryst Growth Des 11(6) : 2599~2605

[journal] Koizumi S / 1997 / Growth and characterization of phosphorous doped 111 homoepitaxial diamond thin films / Appl Phys Lett 71(8) : 1065~1067

[journal] Katagiri M / 2004 / Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition / Appl Phys Lett 85(26) : 6365~6367

[journal] Grotjohn TA / 2014 / Heavy phosphorus doping by epitaxial growth on the (111) diamond surface / Diam Relat Mater 44 : 129~133

[journal] Pinault-Thaury M-A / 2012 / High fraction of substitutional phosphorus in a (100) diamond epilayer with low surface roughness / Appl Phys Lett 100(19) : 192109~

[journal] Shinei C / 2020 / Nearly degenerate ground state of phosphorus donor in diamond / Phys Rev Mater 4(2) : 024603~

[journal] Balasubramaniam Y / 2016 / Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond / Appl Phys Lett 109(6) : 062105~

[journal] Shimaoka T / 2022 / N-type diamond metal-semiconductor field-effect transistor with high operation temperature of 300℃ / IEEE Electron Device Lett 43(4) : 588~591

[journal] Katamune Y / 2023 / Heavy phosphorus doping of diamond by hot-filament chemical vapor deposition / Diam Relat Mater 134 : 109789~

[journal] Kato H / 2005 / N-type conductivity of phosphorus-doped homoepitaxial single crystal diamond on (001) substrate / Diam Relat Mater 14(11-12) : 2007~2010

[journal] Nie S / 2021 / Effects of vacancy and hydrogen on the growth and morphology of n-type phosphorus-doped diamond surfaces / Appl Sci 11(4) : 1896~

[journal] Lloret F / 2023 / High phosphorous incorporation in (100)-oriented MP CVD diamond growth / Diam Relat Mater 133 : 109746~

[journal] Kato H / 2007 / N-type diamond growth by phosphorus doping on (001)-oriented surface / J Phys D Appl Phys 40(20) : 6189~

[journal] Pinault-Thaury MA / 2019 / Phosphorus-doped (113) CVD diamond: a breakthrough towards bipolar diamond devices / Appl Phys Lett 114(11) : 112106~

[journal] Pinault-Thaury MA / 2021 / Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond / Carbon 175 : 254~258

[journal] Kasu M / 2010 / Arsenic-doped n-type diamond grown by microwave-assisted plasma chemical vapor deposition / Jpn J Appl Phys 49 : 110209~

[journal] Sque SJ / 2004 / Shallow donors in diamond: chalcogens, pnictogens, and their hydrogen complexes / Phys Rev Lett 92(1) : 017402~

[journal] Popovici G / 1995 / Properties of diffused diamond films with n-type conductivity / Diam Relat Mater 4(5-6) : 877~881

[journal] Prins JF / 2003 / Ion implantation of diamond for electronic applications / Semicond Sci Technol 18(3) : S27~

[journal] Hu X / 2006 / Electrical and structural properties of diamond films implanted by various doses of oxygen ions / Chin Phys 15(9) : 2170~

[journal] Hu X / 2013 / Oxygen ion implantation enhanced silicon-vacancy photoluminescence and n-type conductivity of ultrananocrystalline diamond films / Chin Phys Lett 30(8) : 088102~

[journal] Nishitani-Gamo M / 2000 / Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties / Diam Relat Mater 9(3-6) : 941~947

[journal] Gao N / 2021 / A comparable study of structural models and donor levels for S doping and B-S co-doping in diamond / Phys B Condens Matter 618 : 413138~

[book] Zhou D / 2023 / First-principles calculation to n-type beryllium related co-doping and beryllium doping in diamond / Lect Notes Comput Sci : 283~294

[journal] Ipaves B / 2024 / Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping / ACS Appl Electron Mater 6(1) : 386~393

[journal] Cai Z / 2022 / Study on the effect of N-H-O co-doping on diamond growth and its mechanism under HPHT by FeNi solvent / CrystEngComm 24(9) : 1773~1781

[journal] Cai Y / 2006 / The origin of shallow n-type conductivity in boron-doped diamond with H or S co-doping: density functional theory study / Diam Relat Mater 15(11-15) : 1868~1877

[journal] Hu X / 2004 / Electrical and structural properties of boron and phosphorus co-doped diamond films / Carbon 42(8-9) : 1501~1506

[journal] Show Y / 1996 / Formation of paramagnetic defects in CVD diamond films (ESR study) / Thin Solid Films 281 : 275~278

[journal] Eaton SC / 2002 / Co-doping of diamond with boron and sulfur / Electrochem Solid-State Lett 5(12-13) : G65~G68

[journal] Tang L / 2018 / N-type B-S co-doping and S doping in diamond from first principles / Carbon 130 : 458~465

[journal] Zhang H / 2017 / Effect of B-S co-doping on large diamonds synthesis under high pressure and high temperature / Int J Refract Met Hard Mater 66 : 26~30

[journal] Liu D / 2021 / Nitrogen modulation of boron doping behavior for accessible n-type diamond / APL Mater 9(8) : 081106~

[confproc] Zhou D / 2022 / n-type B-N co-doping and N doping in diamond from first principles / Comput Sci - ICCS 13350 : 530~540

[journal] Croot A / 2018 / A theoretical study of substitutional boron-nitrogen clusters in diamond / J Phys Condens Matter 30(42) : 425501~

[journal] Feng B / 2024 / First principles investigation on the Boron-VA (VA=N, P, As, Sb) complexes in diamond for possible n-type conductivity / Mater Today Commun 41 : 110266~

[journal] Wu Y / 2021 / N-type diamond semiconductor induced by co-doping selenium and boron / Comput Mater Sci 196 : 110515~

[journal] Zhang D / 2024 / Synthetic pathway of shallow n-type donor: theoretical study of Li and B co-doped diamonds / Diam Relat Mater 141 : 110599~

[journal] Sun X / 2024 / First-principles prediction of n-type diamond: novel co-doped structure using N and Be impurities / J Phys D Appl Phys 57(21) : 215107~

[journal] Sun X / 2025 / Discovery of shallow n-type scheme for boron-nitrogen co-doped diamond based on DFT calculations / Diam Relat Mater 153 : 112041~

[journal] Kajihara SA / 1991 / Nitrogen and potential n-type dopants in diamond / Phys Rev Lett 66(15) : 2010~2013

[journal] Van de Walle CG / 2004 / First-principles calculations for defects and impurities: applications to III-nitrides / J Appl Phys 95(8) : 3851~3879

[journal] Li B / 2025 / Synthesis and properties of n-type semiconductor diamond crystals synthesized via the addition of Fe3P to the Fe-C-P system under HTHP conditions / Diam Relat Mater 152 : 111870~

[journal] Chen J / 2025 / Growth and characterization of diamond with B-Fe3P co-doped grown along the (100) surface / Ceram Int 51(11) : 14021~14027

[journal] Barnard AS / 2005 / Simulation and bonding of dopants in nanocrystalline diamond / J Nanosci Nanotechnol 5(9) : 1395~1407

[journal] Mu C / 2024 / Modulation of diamond PN junction diode with double-layered n-type diamond by using TCAD simulation / Electronics 13(9) : 1703~

[journal] Li R / 2007 / Atomic-scale study of boron-nitrogen co-doping into diamond / Acta Phys-Chim Sin 56(1) : 395~399

[journal] Sundararaman R / 2017 / JDFTx: software for joint density-functional theory / SoftwareX 6 : 278~284

[journal] Qi Z / 2023 / AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations / Appl Surf Sci 615 : 156419~

[journal] Wang L / 2014 / Investigation of the atomic-scale friction of boron doped diamond using molecular dynamics / J Comput Theor Nanosci 11(6) : 1550~1555

[journal] Van Enckevort WJP / 1979 / Monte Carlo simulation of a (111) diamond face around the roughening transition / J Cryst 47(4) : 501~508

[journal] Zhao Q / 2003 / Monte Carlo simulation of electron swarm in the diamond film growth via EACVD / Plasma Sci Technol 5(2) : 1729~1934

[journal] Wang Z / 2025 / Progress in first-principles studies on doped semiconductor diamond / Eur Phys J Spec Top 234(2) : 385~402

[journal] Li J / 2019 / First-principles calculations for Li, P dopants and vacancy defect in ultra-thin hydrogenated diamond nanofilms: structural, electronic and optical properties / Diam Relat Mater 99 : 107526~

[journal] Mainwood A / 1979 / Substitutional impurities in diamond / J Phys C Solid State Phys 12(13) : 2543~2549

[journal] Pöykkö S / 1998 / Possible n-type dopants in diamond and amorphous carbon / Comp Mater Sci 10(1-4) : 351~355

[journal] Laks DB / 1991 / Role of native defects in wide-band-gap semiconductors / Phys Rev Lett 66(5) : 648~651

[journal] Cammarata A / 2022 / Engineering width and directness of the band gap in diamond-based materials: an ab initio investigation towards electron-structure features control / Diam Relat Mater 128 : 109237~

[journal] Zhang M / 2023 / First principles investigation on the boron-oxygen complexes in diamond / Comput Mater Sci 216 : 111867~

[journal] Shen W / 2019 / Binding of hydrogen to phosphorus dopant in phosphorus-doped diamond surfaces: a density functional theory study / Appl Surf Sci 471 : 309~317

[journal] Du J / 2023 / Atomic-scale observation and prediction of gallium ion implantation induced amorphization on natural diamond surface / Vacuum 214 : 112226~

[journal] Zhou D / 2021 / First-principles calculation to n-type Li-N co-doping and Li doping in diamond / Diam Relat Mater 110 : 108070~

[journal] Gao N / 2023 / First-principles study of N and S co-doping in diamond / Diam Relat Mater 132 : 109651~

[confproc] Nishimatsu T / 1997 / Valence controls and codoping for low-resistivity n-type diamond by ab initio molecular-dynamics simulation / Deffcts in Semiconduvtors-ICDS-19, PTS 1-3 258(1-3) : 799~803

[confproc] Zhao Q / 5633 / Characteristic of vapor dynamic process for sulfur doped n-type diamond films / Advanced Materials and Devices for Sensing and Imaging II : 434~438

[journal] Eckert M / 2010 / Insights into the growth of (ultra)nanocrystalline diamond by combined molecular dynamics and Monte Carlo simulations / Cryst Growth Des 10(7) : 3005~3021

[journal] Lehtinen O / 2016 / Molecular dynamics simulations of shallow nitrogen and silicon implantation into diamond / Phys Rev B 93(3) : 035202~

[journal] Pailthorpe B / 1990 / Molecular dynamics simulations of thin film diamond / Thin Solid Films 193(1-2) : 34~41

[journal] Frauenheim T / 1998 / A molecular dynamics study of N-incorporation into carbon systems: doping, diamond growth and nitride formation / Diam Relat Mater 7(2-5) : 348~355

[journal] Li R / 2005 / A molecular dynamics study of boron and nitrogen in diamond / Solid State Commun 135(3) : 155~157

[journal] Gamal SH / 2001 / Simple and efficient monte carlo simulation of high-temperature hole transport in silicon and diamond / Microelectron J 32(4) : 327~329

[journal] Shen L / 2009 / A study of mechanical properties of pure and nitrogen-doped ultrananocrystalline diamond films under various loading conditions / Int J Solids Struct 46(3-4) : 811~823

[journal] Becker S / 2023 / Photoelectrically detected magnetic resonance on sulfur doped NV centers / AIP Adv 13(3) : 035304~

[journal] Jiang S / 2020 / Machine learning (ML)-assisted optimization doping of KI in MAPbI3solar cells / Rare Met 40(7) : 1698~1707

[journal] Chayahara A / 2004 / The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD / Diam Relat Mater 13(11-12) : 1954~1958

[journal] Mokuno Y / 2009 / Improving purity and size of single-crystal diamond plates produced by high-rate CVD growth and lift-off process using ion implantation / Diam Relat Mater 18(10) : 1258~1261

[journal] Mokuno Y / 2005 / Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD / Diam Relat Mater 14(11-12) : 1743~1746

[journal] Yamada H / 2014 / A 2-in. mosaic wafer made of a single-crystal diamond / Appl Phys Lett 104(10) : 141904~

[journal] Qu P / 2024 / Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates / J Semicond 45(9) : 090501~

[journal] Araujo D / 2021 / Diamond for electronics: materials, processing and devices / Materials 14(22) : 7081~

[journal] Zhao F / 2024 / A review of diamond materials and applications in power semiconductor devices / Materials 17(14) : 3437~

[journal] Liu Z / 2020 / Fabrication and characterization of (100)-oriented single-crystal diamond p-i-n junction ultraviolet detector / Phys Status Solidi A 217(21) : 2000207~

[journal] Hasan MM / 2024 / Diamond for high-power, high-frequency, and terahertz plasma wave electronics / Nanomaterials 14(5) : 460~

[journal] Gu L / 2024 / Diamond-based electron emission: Structure, properties and mechanisms / Chin Phys B 33(9) : 098102~

[journal] Ge S / 2025 / Research progress and future perspectives on photonic and optoelectronic devices based on p-type boron-doped diamond/n-type titanium dioxide heterojunctions: a mini review / Nanomaterials 15(13) : 1003~

[journal] O'Donnell KM / 2010 / Ab initio investigation of lithium on the diamond C(100) surface / Phys Rev B 82(11) : 115303~

[journal] Jones D / 2021 / Multidimensional spectroscopy and imaging of defects in synthetic diamond: excitation-emission-lifetime luminescence measurements with multiexponential fitting and phasor analysis / J Phys D Appl Phys 54(4) : 045303~

[journal] Barends R / 2014 / Superconducting quantum circuits at the surface code threshold for fault tolerance / Nature 508(7497) : 500~503

[journal] Liu H / 2025 / High-concentration diamond nitrogen vacancy color center fabricated by microwave plasma chemical vapor deposition and its properties / Acta Phys Sin 74(2) : 028102~

[journal] James MC / 2018 / Negative electron affinity from aluminium on the diamond (100) surface: a theoretical study / J Phys Condens Matter 30(23) : 235002~

[journal] Shen W / 2019 / Electron affinity of boron-terminated diamond (001) surfaces: a density functional theory study / J Mater Chem C 7(31) : 9756~9765

[journal] Koeck FAM / 2009 / Low temperature onset for thermionic emitters based on nitrogen incorporated UNCD films / Diam Relat Mater 18(2-3) : 232~234

[journal] Zhou A / 2021 / Ultrananocrystalline diamond nanowires: fabrication, characterization, and sensor applications / Materials 14(3) : 661~

[journal] Rouzbahani R / 2024 / Advances in n-type chemical vapor deposition diamond growth: morphology and dopant control / Acc Mater Res 5(7) : 775~785

[journal] Prooth J / 2023 / Long spin relaxation times in CVD-grown nanodiamonds / Adv Quantum Technol 6(12) : 2300004~

[journal] Dolde F / 2013 / Room-temperature entanglement between single defect spins in diamond / Nat Phys 9(3) : 139~143

[journal] Bartling HP / 2025 / Universal high-fidelity quantum gates for spin qubits in diamond / Phys Rev Appl 23(3) : 034052~

[journal] Sledz F / 2025 / Electrical excitation of color centers in n-type diamond Schottky diodes / Phys Rev Appl 23(5) : 054060~

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Carbon Letters 2025 KCI Impact Factor : 0.73 KCI-WoS Impact Factor : 6.26

Review of n-type doping diamond: methods, elements, and properties

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Carbon Letters 2025 KCI Impact Factor : 0.73 KCI-WoS Impact Factor : 6.26

Review of n-type doping diamond: methods, elements, and properties

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