본문 바로가기
  • Home
Basic Search

Energy band gap of Zn0.86Mn0.14Te epilayer grown on GaAs(100) substrates

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2003, 13(3), pp.122-126
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : February 14, 2003
  • Accepted : June 9, 2003

Yong Dae Choi 1,  Kab-Soo An 1,  Kwang-Jae Lee 1,  Seoung-Gu Kim 1,  Seok-Ju Shim 1,  Hee-Joong Yun 1,  Young-Moon Yu 2,  Dae-Jung Kim 1,  Jung Yang June 3

1목원대학교
2충남대학교
3목포대학교

Accredited

ABSTRACT

In this study, Z n 0.86 M n 0.14 Te epilayer of 0.7 μ m -thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from Z n 0.86 M n 0.14 Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z n 0.86 M n 0.14 Te epilayer were investigated to be zincblende and 6.140 \AA from X-ray diffraction pattern, respectively. Mn composition x of Z n 1 − x M n x Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of Z n 0.86 M n 0.14 Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of Z n 0.86 M n 0.14 Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of Z n 0.86 M n 0.14 Te epilayer, respectively. The free exciton peak position energy of Z n 0.86 M n 0.14 Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.

Statistics

  • 239 Viewed
  • 0 Downloaded

Tools

Issue List

Citation status

* References for papers published after 2023 are currently being built.

Basic Search Advanced Search