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Complex dielectric function of CdTe/GaAs thin films studied by spectroscopic ellipsometry

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2005, 15(4), pp.157~161
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

진광수 1,  Park, Hyo-Yeol 2,  조재혁 1

1울산과학대학
2울산과학대학교

Accredited

ABSTRACT

Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5~5.5eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the E1, E1 + D1, and E2 critical points. These energies were decreased with increasing thickness of CdTe thin films.

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