KJCKorea
Journal Central

@article{ART001472764},
author={정준호 and 은종원 and 오동근 and 김광진 and 홍태의 and Seong-Min Jeong and Bonggeun Choi and Kwang Bo Shim},
title={Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2010},
volume={20},
number={4},
pages={178-184}

TY - JOUR
AU - 정준호
AU - 은종원
AU - 오동근
AU - 김광진
AU - 홍태의
AU - Seong-Min Jeong
AU - Bonggeun Choi
AU - Kwang Bo Shim
TI - Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2010
VL - 20
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 178
EP - 184
SN - 1225-1429
AB - The 12CaO · 7Al2O3(C12A7) powders were successfully synthesized using combustion method with microwaveassistant and C12A7:H were fabricated by post-annealed process in Ar/H atmosphere. X-ray diffraction patterns and TGDSC were used for investigating to the precursors of crystalline and reaction depending on temperature. C12A7:H that was treated post-annealed process were investigated TG-MS and Hall-measurement for confirming H ions doping and checking electrical resistivity of C12A7:H. H ion substituted to O 2− ions in the C12A7 cages were confirmed at 289.5oC by TG-MS and C12A7:H calcined at 1000oC in Ar/H = 8 : 2 atmosphere for 8~10 h has low electrical resistivity about 102Ω · cm at room temperature.
KW - Microwave-assistant combustion method;Post-annealing treatment;Electrical resistivity of C12A7:H
DO -
UR -
ER -

정준호, 은종원, 오동근, 김광진, 홍태의, Seong-Min Jeong, Bonggeun Choi and Kwang Bo Shim. (2010). Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment. Journal of the Korean Crystal Growth and Crystal Technology, 20(4), 178-184.

정준호, 은종원, 오동근, 김광진, 홍태의, Seong-Min Jeong, Bonggeun Choi and Kwang Bo Shim. 2010, "Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment", Journal of the Korean Crystal Growth and Crystal Technology, vol.20, no.4 pp.178-184.

정준호, 은종원, 오동근, 김광진, 홍태의, Seong-Min Jeong, Bonggeun Choi, Kwang Bo Shim "Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment" Journal of the Korean Crystal Growth and Crystal Technology 20.4 pp.178-184 (2010) : 178.

정준호, 은종원, 오동근, 김광진, 홍태의, Seong-Min Jeong, Bonggeun Choi, Kwang Bo Shim. Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment. 2010; 20(4), 178-184.

정준호, 은종원, 오동근, 김광진, 홍태의, Seong-Min Jeong, Bonggeun Choi and Kwang Bo Shim. "Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment" Journal of the Korean Crystal Growth and Crystal Technology 20, no.4 (2010) : 178-184.

정준호; 은종원; 오동근; 김광진; 홍태의; Seong-Min Jeong; Bonggeun Choi; Kwang Bo Shim. Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment. Journal of the Korean Crystal Growth and Crystal Technology, 20(4), 178-184.

정준호; 은종원; 오동근; 김광진; 홍태의; Seong-Min Jeong; Bonggeun Choi; Kwang Bo Shim. Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment. Journal of the Korean Crystal Growth and Crystal Technology. 2010; 20(4) 178-184.

정준호, 은종원, 오동근, 김광진, 홍태의, Seong-Min Jeong, Bonggeun Choi, Kwang Bo Shim. Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment. 2010; 20(4), 178-184.

정준호, 은종원, 오동근, 김광진, 홍태의, Seong-Min Jeong, Bonggeun Choi and Kwang Bo Shim. "Transition of 12CaO · 7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment" Journal of the Korean Crystal Growth and Crystal Technology 20, no.4 (2010) : 178-184.