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Growth and optical properties for MgGa2Se4 single crystal thin film by hot wall epitaxy

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2011, 21(3), pp.99-104
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Moon,Jong-Dae 1,  Kwang Joon Hong 2

1동신대학교
2조선대학교

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ABSTRACT

A stoichiometric mixture of evaporating materials for MgGa2Se4 single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants a0 =3.953 Å, c0 = 38.890 Å. To obtain the single crystal thin films, MgGa2Se4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610oC and 400oC, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ω-2θ scans. The carrier density and mobility of MgGa2Se4 single crystal thin films measured from Hall effect by van der Pauw method were 6.21 × 1018 cm−3 and 248 cm2/v·s at 293 K, respectively. The optical absorption of MgGa2Se4 single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the MgGa2Se4 obtained from the absorption spectra was well described by the Varshni’s equation, Eg(T) = Eg(0) − (αT2/T + β). The constants of Varshni’s equation had the values of Eg(0) = 2.34 eV, α = 8.80 × 10−4 eV/K and β = 251 K, respectively.

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