Photocurrent study on the splitting of the valence band and growth of MgGa2Se4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)법에 의한 MgGa2Se4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

김혜정; 박향숙; 방진주; 강종욱; Kwang Joon Hong (홍광준)

doi:10.6111/JKCGCT.2013.23.6.283

Photocurrent study on the splitting of the valence band and growth of MgGa2Se4 single crystal thin film by hot wall epitaxy

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2013, 23(6), pp.283-290
DOI : 10.6111/JKCGCT.2013.23.6.283
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

김혜정 ¹, 박향숙 ¹, 방진주 ¹, 강종욱 ¹, Kwang Joon Hong ¹

¹조선대학교

Accredited

ABSTRACT

A stoichiometric mixture of evaporating materials for MgGa2Se4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, MgGa2Se4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610oC and 400oC, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the MgGa2Se4 obtained from the absorption spectra was well described by the Varshni’s relation, Eg(T) = 2.34 eV − (8.81 × 10−4 eV/K)T2/(T + 251 K). The crystal field and the spin-orbit splitting energies for the valence band of the MgGa2Se4 have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ5 states of the valence band of the MgGa2Se4/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the A1-, B1-exciton for n = 1 and C27-exciton peaks for n = 27.

KEYWORDS

MgGa2Se4, Hot wall epitaxy, Crystal growth, Energy band gap, Photocurrent spectum, Crystal field splitting energy, Spin-orbit splitting energy

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Photocurrent study on the splitting of the valence band and growth of MgGa2Se4 single crystal thin film by hot wall epitaxy

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Photocurrent study on the splitting of the valence band and growth of MgGa2Se4 single crystal thin film by hot wall epitaxy

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