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n-InP crystal growth for 2 inch wafers and their characterization

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2024, 34(6), pp.272-280
  • DOI : 10.6111/JKCGCT.2024.34.6.272
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : September 30, 2024
  • Accepted : November 14, 2024
  • Published : December 31, 2024

SEOK JOO SEON 1,  Gyeongchan Lee 1,  Hakjun Lim 2,  Kyung Joo 2,  Ju, Heongkyu 1

1가천대학교
2(주)미코 하이테크

Accredited

ABSTRACT

Indium phosphide (InP) is a direct bandgap III-V semiconductor with the bandgap energy of approximately 1.36 eV, being used as a substrate semiconductor to fabricate optoelectronic devices at the near-infrared wavelengths such as 1,550 nm (telecommunication wavebands). Such optoelectronic devices include LiDAR for autonomous vehicles, semiconductor lasers, medical semiconductor lasers, photodetectors, infrared seekers for military missiles, military purpose high-power lasers, and various types of sensors. In this study, n-type InP doped with sulfur (S) was grown using the high-pressure Vertical Bridgman (VB) method for fabricating 2 inch wafers. We arranged the five specimens from five different positions on the wafer for characterization of various properties such as crystallographic, electrical, and optical one, via X-ray diffraction (XRD), transmission electron microscopy (TEM), etch pit density (EPD) estimation, Hall effects measurements, photoluminescence excitation (PLE) spectroscopy, and time-resolved photoluminescence (TR-PL). Characterization results indicated that the grown crystals could be approximately estimated as single crystals with Zincblende structure of (100) orientation and exhibited comparable or relatively good properties of electrical properties in comparison with n-InP single crystal wafers commercially available from overseas manufacturers. However, defects and crystalline impurity such as EPD were seen to be considerably higher than those of wafers of overseas manufacturers and needed to be minimized for improving n-InP single crystals. Given such defects, future works need to include the relevant optimization of growing conditions.

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