@article{ART003187579},
author={Min-Ji Chae and Sun-Yeong Seo and Mi-Seon Park and Gwang-Hee Jung and Jung-Gon Kim and Lee, Won Jae},
title={Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2025},
volume={35},
number={1},
pages={1-12},
doi={10.6111/JKCGCT.2025.35.1.001}
TY - JOUR
AU - Min-Ji Chae
AU - Sun-Yeong Seo
AU - Mi-Seon Park
AU - Gwang-Hee Jung
AU - Jung-Gon Kim
AU - Lee, Won Jae
TI - Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2025
VL - 35
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 12
SN - 1225-1429
AB - β-Ga₂O₃ is a semiconductor material that has attracted much attention in power device applications due to its physical properties of an ultra-wide bandgap (4.9 eV) and high breakdown voltage (8 MV/cm). In this study, wesuccessfully prepared (001) β-Ga₂O₃ crystals doped with key impurities (including unintentional doping (UID)) such as Sn, Si, and Fe for n-type conductivity by using the EFG (Edge-defined Film-fed Growth) method. We conducted structural and optical characterization of β-Ga₂O₃ crystals doped with key impurities. XPS analysis indicated that characteristic peaks originating from Ga and O were commonly observed in all β-Ga₂O₃ crystals. The binding energy gradually decreased with the incorporation of dopants into the lattice. The Sn dopant was effectively employed and activated in the lattice of β-Ga₂O₃ crystals; however, Fe and Si dopants were barely incorporated into the lattice. XRD and Raman scattering analysis showed that the obtained β-Ga₂O₃ crystals had high crystal quality, and the crystal quality did not depend on different kinds of dopants. In UVF (UV fluorescence) measurements and RGB color analysis, UID, Si-, and Sn-doped Ga₂O₃ crystals showed intense blue luminescence; however, the Fe-doped Ga₂O₃ crystal showed pink luminescence. This trend was also observed from PL spectral analysis. UID, Si-, and Sn-doped Ga₂O₃ crystals show dominant blue (2.8~3.0 eV) and green luminescence (~2.4 eV, more dominant) originating from impurity levels of the donor-acceptor pair between O (donor) and Ga (acceptor) vacancies. This indicates that the luminescence between intrinsic impurity levels generated by the voids was not significantly affected by the dopant. However, Fe-doped in Ga₂O₃ crystals shows relatively intense red and IR region luminescence (consistent with the pink luminescence from UVF) with quenching of the green and blue luminescence. The PL quenching in the blue and green regions originated from the increase in non-radiative recombination due to the generation of trap states by the Fe dopant. In this study, we systematically analyzed the structural and optical properties of β-Ga₂O₃ crystals doped for n-type conductivity, and we look forward to the establishment of a series of nondestructive analytical echniques for the analysis of β-Ga₂O₃ crystals.
KW - β-Ga₂O₃;Edge-defined Film-fed growth;UID;Sn-doping;Si-doping;Fe-doping;X-ray photoelectron spectroscopy;X-ray diffraction;Raman spectroscopy;Photoluminescence
DO - 10.6111/JKCGCT.2025.35.1.001
ER -
Min-Ji Chae, Sun-Yeong Seo, Mi-Seon Park, Gwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. (2025). Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity. Journal of the Korean Crystal Growth and Crystal Technology, 35(1), 1-12.
Min-Ji Chae, Sun-Yeong Seo, Mi-Seon Park, Gwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. 2025, "Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity", Journal of the Korean Crystal Growth and Crystal Technology, vol.35, no.1 pp.1-12. Available from: doi:10.6111/JKCGCT.2025.35.1.001
Min-Ji Chae, Sun-Yeong Seo, Mi-Seon Park, Gwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae "Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity" Journal of the Korean Crystal Growth and Crystal Technology 35.1 pp.1-12 (2025) : 1.
Min-Ji Chae, Sun-Yeong Seo, Mi-Seon Park, Gwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae. Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity. 2025; 35(1), 1-12. Available from: doi:10.6111/JKCGCT.2025.35.1.001
Min-Ji Chae, Sun-Yeong Seo, Mi-Seon Park, Gwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. "Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity" Journal of the Korean Crystal Growth and Crystal Technology 35, no.1 (2025) : 1-12.doi: 10.6111/JKCGCT.2025.35.1.001
Min-Ji Chae; Sun-Yeong Seo; Mi-Seon Park; Gwang-Hee Jung; Jung-Gon Kim; Lee, Won Jae. Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity. Journal of the Korean Crystal Growth and Crystal Technology, 35(1), 1-12. doi: 10.6111/JKCGCT.2025.35.1.001
Min-Ji Chae; Sun-Yeong Seo; Mi-Seon Park; Gwang-Hee Jung; Jung-Gon Kim; Lee, Won Jae. Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity. Journal of the Korean Crystal Growth and Crystal Technology. 2025; 35(1) 1-12. doi: 10.6111/JKCGCT.2025.35.1.001
Min-Ji Chae, Sun-Yeong Seo, Mi-Seon Park, Gwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae. Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity. 2025; 35(1), 1-12. Available from: doi:10.6111/JKCGCT.2025.35.1.001
Min-Ji Chae, Sun-Yeong Seo, Mi-Seon Park, Gwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. "Characterization of structural and optical properties on (001) β-Ga₂O₃ doped with key impurities for n type conductivity" Journal of the Korean Crystal Growth and Crystal Technology 35, no.1 (2025) : 1-12.doi: 10.6111/JKCGCT.2025.35.1.001
