@article{ART003386877},
author={Choi ByoungSu and Jung Yong Son and Yu Mi Kim and Ahn Taejun and Sungu Hwang and Ryu, Jeong-ho and BYEONG WOO LEE and Cho, Hyun},
title={Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2026},
volume={36},
number={3},
pages={118-123},
doi={10.6111/JKCGCT.2026.36.3.118}
TY - JOUR
AU - Choi ByoungSu
AU - Jung Yong Son
AU - Yu Mi Kim
AU - Ahn Taejun
AU - Sungu Hwang
AU - Ryu, Jeong-ho
AU - BYEONG WOO LEE
AU - Cho, Hyun
TI - Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2026
VL - 36
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 118
EP - 123
SN - 1225-1429
AB - The effects of deposition temperature and post-annealing on the structural and optical properties of Ga₂O₃ thin films deposited by RF magnetron sputtering were investigated. As the deposition temperature increased from room temperature to 400°C, the deposition rate slightly increased from 2.29 nm/min to 2.45 nm/min. The Ga₂O₃ thin films deposited at various substrate temperatures primarily exhibited the ε-Ga₂O₃ phase, with a slight improvement in crystallinity as the deposition temperature increased. After annealing at 800 C in air, the ε-Ga₂O₃ and β-Ga₂O₃ phases coexisted due to the progression of the phase transition to the β-Ga₂O₃ phase. After annealing at 1,000°C, the films were completely transformed into the thermodynamically stable β-Ga₂O₃ phase. In addition, the grain size increased with increasing annealing temperature. The as-deposited Ga₂O₃ films exhibited a high visible-light transmittance of approximately 88 % and optical bandgaps of 4.67~4.80 eV. Post-annealing at 1,000°C in air was found to induce stabilization of the crystal structure and optical properties of the Ga₂O₃ films, resulting in the convergence of the optical bandgap to a narrow range of 4.73~4.76 eV. The Ga₂O₃ thin films deposited by RF magnetron sputtering and subsequently annealed at 1,000°C in air exhibited an optical absorption edge of approximately 260~262 nm, indicating their potential suitability for solar-blind UV photodetector applications.
KW - Ga₂O₃ thin film;Solar blind photodetector;Substrate temperature;Post-annealing;Crystalline phase;Optical bandgap
DO - 10.6111/JKCGCT.2026.36.3.118
ER -
Choi ByoungSu, Jung Yong Son, Yu Mi Kim, Ahn Taejun, Sungu Hwang, Ryu, Jeong-ho, BYEONG WOO LEE and Cho, Hyun. (2026). Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering. Journal of the Korean Crystal Growth and Crystal Technology, 36(3), 118-123.
Choi ByoungSu, Jung Yong Son, Yu Mi Kim, Ahn Taejun, Sungu Hwang, Ryu, Jeong-ho, BYEONG WOO LEE and Cho, Hyun. 2026, "Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering", Journal of the Korean Crystal Growth and Crystal Technology, vol.36, no.3 pp.118-123. Available from: doi:10.6111/JKCGCT.2026.36.3.118
Choi ByoungSu, Jung Yong Son, Yu Mi Kim, Ahn Taejun, Sungu Hwang, Ryu, Jeong-ho, BYEONG WOO LEE, Cho, Hyun "Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering" Journal of the Korean Crystal Growth and Crystal Technology 36.3 pp.118-123 (2026) : 118.
Choi ByoungSu, Jung Yong Son, Yu Mi Kim, Ahn Taejun, Sungu Hwang, Ryu, Jeong-ho, BYEONG WOO LEE, Cho, Hyun. Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering. 2026; 36(3), 118-123. Available from: doi:10.6111/JKCGCT.2026.36.3.118
Choi ByoungSu, Jung Yong Son, Yu Mi Kim, Ahn Taejun, Sungu Hwang, Ryu, Jeong-ho, BYEONG WOO LEE and Cho, Hyun. "Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering" Journal of the Korean Crystal Growth and Crystal Technology 36, no.3 (2026) : 118-123.doi: 10.6111/JKCGCT.2026.36.3.118
Choi ByoungSu; Jung Yong Son; Yu Mi Kim; Ahn Taejun; Sungu Hwang; Ryu, Jeong-ho; BYEONG WOO LEE; Cho, Hyun. Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering. Journal of the Korean Crystal Growth and Crystal Technology, 36(3), 118-123. doi: 10.6111/JKCGCT.2026.36.3.118
Choi ByoungSu; Jung Yong Son; Yu Mi Kim; Ahn Taejun; Sungu Hwang; Ryu, Jeong-ho; BYEONG WOO LEE; Cho, Hyun. Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering. Journal of the Korean Crystal Growth and Crystal Technology. 2026; 36(3) 118-123. doi: 10.6111/JKCGCT.2026.36.3.118
Choi ByoungSu, Jung Yong Son, Yu Mi Kim, Ahn Taejun, Sungu Hwang, Ryu, Jeong-ho, BYEONG WOO LEE, Cho, Hyun. Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering. 2026; 36(3), 118-123. Available from: doi:10.6111/JKCGCT.2026.36.3.118
Choi ByoungSu, Jung Yong Son, Yu Mi Kim, Ahn Taejun, Sungu Hwang, Ryu, Jeong-ho, BYEONG WOO LEE and Cho, Hyun. "Effects of deposition temperature and post-annealing on the structural and optical properties of Ga2O3 thin films deposited by rf magnetron sputtering" Journal of the Korean Crystal Growth and Crystal Technology 36, no.3 (2026) : 118-123.doi: 10.6111/JKCGCT.2026.36.3.118
