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Characterization of chemical vapor deposition-grown graphene films with various etchants

  • Carbon Letters
  • Abbr : Carbon Lett.
  • 2012, 13(1), pp.44-47
  • Publisher : Korean Carbon Society
  • Research Area : Natural Science > Natural Science General > Other Natural Sciences General

Hongkyw Choi 1 Kim, Jong Yun 2 Hu Young Jeong 3 Choon-Gi Choi 1 최성율 4

1University of Science and Technology
2충남대학교
3Ulsan National Institute of Science and Technology
4한국과학기술원

Accredited

ABSTRACT

We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of FeCl_3 etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations (HNO_3, HCl, FeCl_3 + HCl, and FeCl_3 + HNO_3). The combination of FeCl_3 and acidic solutions (HCl and HNO_3) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

Citation status

This is the result of checking the information with the same ISSN, publication year, volume, and start page between the WoS and the KCI journals. (as of 2023-01-02)

Total Citation Counts(KCI+WOS) (11) This is the number of times that the duplicate count has been removed by comparing the citation list of WoS and KCI.

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