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Contact resistance in graphene channel transistors

  • Carbon Letters
  • Abbr : Carbon Lett.
  • 2013, 14(3), pp.162-170
  • Publisher : Korean Carbon Society
  • Research Area : Natural Science > Natural Science General > Other Natural Sciences General

송성민 1 조병진 1

1한국과학기술원

Accredited

ABSTRACT

The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.

Citation status

This is the result of checking the information with the same ISSN, publication year, volume, and start page between the WoS and the KCI journals. (as of 2023-01-02)

Total Citation Counts(KCI+WOS) (30) This is the number of times that the duplicate count has been removed by comparing the citation list of WoS and KCI.

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This paper was written with support from the National Research Foundation of Korea.