Contact resistance in graphene channel transistors

송성민; 조병진

Contact resistance in graphene channel transistors

Carbon Letters
Abbr : Carbon Lett.
2013, 14(3), pp.162-170
Publisher : Korean Carbon Society
Research Area : Natural Science > Natural Science General > Other Natural Sciences General

송성민 ¹, 조병진 ¹

¹한국과학기술원

Accredited

ABSTRACT

The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.

KEYWORDS

graphene, contact resistance, work function, charge transport

Citation status

This is the result of checking the information with the same ISSN, publication year, volume, and start page between the WoS and the KCI journals. (as of 2023-01-02)

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* References for papers published after 2023 are currently being built.

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This paper was written with support from the National Research Foundation of Korea.

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Journal Central

Carbon Letters 2023 KCI Impact Factor : 1.35 KCI-WoS Impact Factor : 4.82