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Reduction of metal-graphene contact resistance by direct growth of graphene over metal

  • Carbon Letters
  • Abbr : Carbon Lett.
  • 2013, 14(3), pp.171-174
  • Publisher : Korean Carbon Society
  • Research Area : Natural Science > Natural Science General > Other Natural Sciences General

Seul Ki Hong 1 송승민 1 Onejae Sul 1 조병진 1

1한국과학기술원

Accredited

ABSTRACT

The high quality contact between graphene and the metal electrode is a crucial factor in achieving the high performance of graphene transistors. However, there is not sufficient research about contact resistance reduction methods to improve the junction of metal-graphene. In this paper, we propose a new method to decrease the contact resistance between graphene and metal using directly grown graphene over a metal surface. The study found that the grown graphene over copper, as an intermediate layer between the copper and the transferred graphene, reduces contact resistance, and that the adhesion strength between graphene and metal becomes stronger. The results confirmed the contact resistance of the metalgraphene of the proposed structure is nearly half that of the conventional contact structure.

Citation status

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Total Citation Counts(KCI+WOS) (3) This is the number of times that the duplicate count has been removed by comparing the citation list of WoS and KCI.

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This paper was written with support from the National Research Foundation of Korea.