@article{ART002842773},
author={Wang Hongyu and Rath Ashutosh and Yu Shu Hearn and Tan Meng Seng and Pennycook Stephen J. and Chua Daniel H. C.},
title={Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum},
journal={Carbon Letters},
issn={1976-4251},
year={2021},
volume={31},
number={2},
pages={315-322},
doi={10.1007/s42823-020-00167-5}
TY - JOUR
AU - Wang Hongyu
AU - Rath Ashutosh
AU - Yu Shu Hearn
AU - Tan Meng Seng
AU - Pennycook Stephen J.
AU - Chua Daniel H. C.
TI - Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum
JO - Carbon Letters
PY - 2021
VL - 31
IS - 2
PB - Korean Carbon Society
SP - 315
EP - 322
SN - 1976-4251
AB - We report a simple procedure to fabricate single crystals 3D C60 having an FCC structure on silicon substrates using a vapour–solid set-up in vacuum conditions. The morphology of the deposited film can be tuned by controlling the temperature and position of the substrate. The as-fabricated samples are extensively characterised by transmission electron microscopy, scanning electron microscope, X-ray powder diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and nano-indentation, which allow us to shed light on the recrystallization process of the C60. In addition, the growth mechanism of the formation of crystalline 3D structure of the C60 film is discussed in detail. Based on the newly gained knowledge of mechanism and its unique properties, fullerene has shown huge potential as a solid lubricant on various kinds of substrates.
KW - Fullerene Vapour–solid Ultra-crystalline
DO - 10.1007/s42823-020-00167-5
ER -
Wang Hongyu, Rath Ashutosh, Yu Shu Hearn, Tan Meng Seng, Pennycook Stephen J. and Chua Daniel H. C.. (2021). Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum. Carbon Letters, 31(2), 315-322.
Wang Hongyu, Rath Ashutosh, Yu Shu Hearn, Tan Meng Seng, Pennycook Stephen J. and Chua Daniel H. C.. 2021, "Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum", Carbon Letters, vol.31, no.2 pp.315-322. Available from: doi:10.1007/s42823-020-00167-5
Wang Hongyu, Rath Ashutosh, Yu Shu Hearn, Tan Meng Seng, Pennycook Stephen J., Chua Daniel H. C. "Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum" Carbon Letters 31.2 pp.315-322 (2021) : 315.
Wang Hongyu, Rath Ashutosh, Yu Shu Hearn, Tan Meng Seng, Pennycook Stephen J., Chua Daniel H. C.. Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum. 2021; 31(2), 315-322. Available from: doi:10.1007/s42823-020-00167-5
Wang Hongyu, Rath Ashutosh, Yu Shu Hearn, Tan Meng Seng, Pennycook Stephen J. and Chua Daniel H. C.. "Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum" Carbon Letters 31, no.2 (2021) : 315-322.doi: 10.1007/s42823-020-00167-5
Wang Hongyu; Rath Ashutosh; Yu Shu Hearn; Tan Meng Seng; Pennycook Stephen J.; Chua Daniel H. C.. Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum. Carbon Letters, 31(2), 315-322. doi: 10.1007/s42823-020-00167-5
Wang Hongyu; Rath Ashutosh; Yu Shu Hearn; Tan Meng Seng; Pennycook Stephen J.; Chua Daniel H. C.. Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum. Carbon Letters. 2021; 31(2) 315-322. doi: 10.1007/s42823-020-00167-5
Wang Hongyu, Rath Ashutosh, Yu Shu Hearn, Tan Meng Seng, Pennycook Stephen J., Chua Daniel H. C.. Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum. 2021; 31(2), 315-322. Available from: doi:10.1007/s42823-020-00167-5
Wang Hongyu, Rath Ashutosh, Yu Shu Hearn, Tan Meng Seng, Pennycook Stephen J. and Chua Daniel H. C.. "Fabrication and growth mechanism of ultra-crystalline C60 on silicon substrate in vacuum" Carbon Letters 31, no.2 (2021) : 315-322.doi: 10.1007/s42823-020-00167-5
