High-speed growth of high-quality polycrystalline diamond films by MPCVD

Chen Kai; Tao Tao; Hu Wenxiao; Ye Yucong; Zheng Kaiwen; Ye Jiandong; Zhi Ting; Wang Xiwei; Liu Bin; Zhang Rong

doi:10.1007/s42823-023-00534-y

High-speed growth of high-quality polycrystalline diamond films by MPCVD

Carbon Letters
Abbr : Carbon Lett.
2023, 33(7), pp.2003~2010
DOI : 10.1007/s42823-023-00534-y
Publisher : Korean Carbon Society
Research Area : Natural Science > Natural Science General > Other Natural Sciences General
Received : March 17, 2023
Accepted : May 13, 2023
Published : December 1, 2023

Chen Kai ¹, Tao Tao ¹, Hu Wenxiao ¹, Ye Yucong ¹, Zheng Kaiwen ¹, Ye Jiandong ¹, Zhi Ting ², Wang Xiwei ³, Liu Bin ¹, Zhang Rong ¹

¹Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, People’s Republic of China
²College of Electronic and Optical Engineering & College of Flexible Electronics, Department of Electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People’s Republic of China
³Institute of Novel Semiconductors, Shandong University, Jinan, 250100, People’s Republic of China

Accredited

ABSTRACT

High-quality diamond films have attracted extensive attentions due to their excellent optical and electrical properties. However, several issues, such as random orientation, stress accumulation, and slow growth rate, severely limit its applications. In this paper, high-quality polycrystalline diamond films with highly ordered (100) orientation were prepared by microwave plasma chemical vapor deposition. The effects of growth parameters on the microstructure, quality and residual stress of diamond films were investigated. Experimental results indicate that relatively high temperature at low methane concentration will promote the formation of (100) oriented grains with a low compressive stress. Optimized growth parameters, a methane concentration of 2% along with a pressure of 250 Torr and temperature at 1050 ℃, were used to acquire high growth rate of 7.9 μm/h and narrow full width at half maximum of Raman peak of 5.5 cm−1 revealing a high crystal quality. It demonstrates a promising method for rapid growth of high-quality polycrystalline diamond films with (100) orientation, which is vital for improving the diamond related applications at low cost.

KEYWORDS

Diamond films (100) oriented High quality Growth rate Microwave plasma chemical vapor deposition

Citation status

Scopus Citation Counts (3) This is the result of checking the information with the same ISSN, publication year, volume, and start page between articles in KCI and the SCOPUS journals. (as of 2025-01-01)

* References for papers published after 2023 are currently being built.

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Carbon Letters 2023 KCI Impact Factor : 1.35 KCI-WoS Impact Factor : 6.04

High-speed growth of high-quality polycrystalline diamond films by MPCVD

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Scopus Citation Counts (3) This is the result of checking the information with the same ISSN, publication year, volume, and start page between articles in KCI and the SCOPUS journals. (as of 2025-01-01)

* References for papers published after 2023 are currently being built.

Carbon Letters 2023 KCI Impact Factor : 1.35 KCI-WoS Impact Factor : 6.04

High-speed growth of high-quality polycrystalline diamond films by MPCVD

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KEYWORDS

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Scopus Citation Counts (3) This is the result of checking the information with the same ISSN, publication year, volume, and start page between articles in KCI and the SCOPUS journals. (as of 2025-01-01)

REFERENCES (38) * References for papers published after 2023 are currently being built.

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