@article{ART003273887},
author={Dong Yeong Kim and Hokyun Rho and Eunyoung Lee and Junwoo Kim and Sukang Bae and Tae‑Wook Kim and Sang Hyun Lee},
title={Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors},
journal={Carbon Letters},
issn={1976-4251},
year={2025},
volume={35},
number={5},
pages={2299-2305},
doi={10.1007/s42823-025-00923-5}
TY - JOUR
AU - Dong Yeong Kim
AU - Hokyun Rho
AU - Eunyoung Lee
AU - Junwoo Kim
AU - Sukang Bae
AU - Tae‑Wook Kim
AU - Sang Hyun Lee
TI - Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors
JO - Carbon Letters
PY - 2025
VL - 35
IS - 5
PB - Korean Carbon Society
SP - 2299
EP - 2305
SN - 1976-4251
AB - The distinctive surface characteristics of two-dimensional(2D) materials present a significant challenge when developing heterostructures for electronic or optoelectronic devices. In this study, we present a method for fabricating top-gate graphene field-effect transistors (FETs) by incorporating a metal interlayer between the dielectric and graphene. The deposition of an ultrathin Ti layer facilitates the formation of a uniform HfO₂ layer on the graphene surface via atomic layer deposition (ALD). During the ALD process, the Ti layer oxidizes to TiO₂, which has a negligible impact on the current flow along the graphene channel. The mobility of graphene in the FET was enhanced in relation to the SiO₂-based back-gate FET by modifying the thin HfO₂ top-gate dielectric deposited on the Ti interlayer. Furthermore, shifts in the Dirac point and subthreshold swing were markedly reduced owing to the reduction in charge scattering caused by the presence of trap sites at the interface between graphene and SiO₂. This route to modulating the interface between 2D material-based heterostructures will provide an opportunity to improve the performance and stability of 2D electronics and optoelectronics.
KW - Graphene;Dielectrics;Field-effect transistor;Interfacial layer;Atomic layer deposition
DO - 10.1007/s42823-025-00923-5
ER -
Dong Yeong Kim, Hokyun Rho, Eunyoung Lee, Junwoo Kim, Sukang Bae, Tae‑Wook Kim and Sang Hyun Lee. (2025). Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. Carbon Letters, 35(5), 2299-2305.
Dong Yeong Kim, Hokyun Rho, Eunyoung Lee, Junwoo Kim, Sukang Bae, Tae‑Wook Kim and Sang Hyun Lee. 2025, "Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors", Carbon Letters, vol.35, no.5 pp.2299-2305. Available from: doi:10.1007/s42823-025-00923-5
Dong Yeong Kim, Hokyun Rho, Eunyoung Lee, Junwoo Kim, Sukang Bae, Tae‑Wook Kim, Sang Hyun Lee "Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors" Carbon Letters 35.5 pp.2299-2305 (2025) : 2299.
Dong Yeong Kim, Hokyun Rho, Eunyoung Lee, Junwoo Kim, Sukang Bae, Tae‑Wook Kim, Sang Hyun Lee. Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. 2025; 35(5), 2299-2305. Available from: doi:10.1007/s42823-025-00923-5
Dong Yeong Kim, Hokyun Rho, Eunyoung Lee, Junwoo Kim, Sukang Bae, Tae‑Wook Kim and Sang Hyun Lee. "Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors" Carbon Letters 35, no.5 (2025) : 2299-2305.doi: 10.1007/s42823-025-00923-5
Dong Yeong Kim; Hokyun Rho; Eunyoung Lee; Junwoo Kim; Sukang Bae; Tae‑Wook Kim; Sang Hyun Lee. Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. Carbon Letters, 35(5), 2299-2305. doi: 10.1007/s42823-025-00923-5
Dong Yeong Kim; Hokyun Rho; Eunyoung Lee; Junwoo Kim; Sukang Bae; Tae‑Wook Kim; Sang Hyun Lee. Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. Carbon Letters. 2025; 35(5) 2299-2305. doi: 10.1007/s42823-025-00923-5
Dong Yeong Kim, Hokyun Rho, Eunyoung Lee, Junwoo Kim, Sukang Bae, Tae‑Wook Kim, Sang Hyun Lee. Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. 2025; 35(5), 2299-2305. Available from: doi:10.1007/s42823-025-00923-5
Dong Yeong Kim, Hokyun Rho, Eunyoung Lee, Junwoo Kim, Sukang Bae, Tae‑Wook Kim and Sang Hyun Lee. "Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors" Carbon Letters 35, no.5 (2025) : 2299-2305.doi: 10.1007/s42823-025-00923-5
