@article{ART003273887},
author={Kim Dong Yeong and Rho Hokyun and Lee Eunyoung and Kim Junwoo and Bae Sukang and Kim Tae-Wook and Lee Sang Hyun},
title={Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors},
journal={Carbon Letters},
issn={1976-4251},
year={2025},
volume={35},
number={5},
pages={2299-2305},
doi={10.1007/s42823-025-00923-5}
TY - JOUR
AU - Kim Dong Yeong
AU - Rho Hokyun
AU - Lee Eunyoung
AU - Kim Junwoo
AU - Bae Sukang
AU - Kim Tae-Wook
AU - Lee Sang Hyun
TI - Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors
JO - Carbon Letters
PY - 2025
VL - 35
IS - 5
PB - Korean Carbon Society
SP - 2299
EP - 2305
SN - 1976-4251
AB - The distinctive surface characteristics of two-dimensional(2D) materials present a significant challenge when developing heterostructures for electronic or optoelectronic devices. In this study, we present a method for fabricating top-gate graphene field-effect transistors (FETs) by incorporating a metal interlayer between the dielectric and graphene. The deposition of an ultrathin Ti layer facilitates the formation of a uniform HfO₂ layer on the graphene surface via atomic layer deposition (ALD). During the ALD process, the Ti layer oxidizes to TiO₂, which has a negligible impact on the current flow along the graphene channel. The mobility of graphene in the FET was enhanced in relation to the SiO₂-based back-gate FET by modifying the thin HfO₂ top-gate dielectric deposited on the Ti interlayer. Furthermore, shifts in the Dirac point and subthreshold swing were markedly reduced owing to the reduction in charge scattering caused by the presence of trap sites at the interface between graphene and SiO₂. This route to modulating the interface between 2D material-based heterostructures will provide an opportunity to improve the performance and stability of 2D electronics and optoelectronics.
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KW - Graphene;Dielectrics;Field-effect transistor;Interfacial layer;Atomic layer deposition
DO - 10.1007/s42823-025-00923-5
ER -
Kim Dong Yeong, Rho Hokyun, Lee Eunyoung, Kim Junwoo, Bae Sukang, Kim Tae-Wook and Lee Sang Hyun. (2025). Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. Carbon Letters, 35(5), 2299-2305.
Kim Dong Yeong, Rho Hokyun, Lee Eunyoung, Kim Junwoo, Bae Sukang, Kim Tae-Wook and Lee Sang Hyun. 2025, "Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors", Carbon Letters, vol.35, no.5 pp.2299-2305. Available from: doi:10.1007/s42823-025-00923-5
Kim Dong Yeong, Rho Hokyun, Lee Eunyoung, Kim Junwoo, Bae Sukang, Kim Tae-Wook, Lee Sang Hyun "Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors" Carbon Letters 35.5 pp.2299-2305 (2025) : 2299.
Kim Dong Yeong, Rho Hokyun, Lee Eunyoung, Kim Junwoo, Bae Sukang, Kim Tae-Wook, Lee Sang Hyun. Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. 2025; 35(5), 2299-2305. Available from: doi:10.1007/s42823-025-00923-5
Kim Dong Yeong, Rho Hokyun, Lee Eunyoung, Kim Junwoo, Bae Sukang, Kim Tae-Wook and Lee Sang Hyun. "Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors" Carbon Letters 35, no.5 (2025) : 2299-2305.doi: 10.1007/s42823-025-00923-5
Kim Dong Yeong; Rho Hokyun; Lee Eunyoung; Kim Junwoo; Bae Sukang; Kim Tae-Wook; Lee Sang Hyun. Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. Carbon Letters, 35(5), 2299-2305. doi: 10.1007/s42823-025-00923-5
Kim Dong Yeong; Rho Hokyun; Lee Eunyoung; Kim Junwoo; Bae Sukang; Kim Tae-Wook; Lee Sang Hyun. Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. Carbon Letters. 2025; 35(5) 2299-2305. doi: 10.1007/s42823-025-00923-5
Kim Dong Yeong, Rho Hokyun, Lee Eunyoung, Kim Junwoo, Bae Sukang, Kim Tae-Wook, Lee Sang Hyun. Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors. 2025; 35(5), 2299-2305. Available from: doi:10.1007/s42823-025-00923-5
Kim Dong Yeong, Rho Hokyun, Lee Eunyoung, Kim Junwoo, Bae Sukang, Kim Tae-Wook and Lee Sang Hyun. "Interfacial control for uniformly depositing oxide dielectrics in top-gate graphene field-effect transistors" Carbon Letters 35, no.5 (2025) : 2299-2305.doi: 10.1007/s42823-025-00923-5
