@article{ART003341985},
author={Ding Yulong and Jiang Jun and Liang Junzhong and Qin Xiaoyu and Ke Yanlin and She Juncong and Zhang Yu and Deng Shaozhi},
title={A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor},
journal={Carbon Letters},
issn={1976-4251},
year={2026},
volume={36},
number={1},
pages={397-405},
doi={10.1007/s42823-025-00993-5}
TY - JOUR
AU - Ding Yulong
AU - Jiang Jun
AU - Liang Junzhong
AU - Qin Xiaoyu
AU - Ke Yanlin
AU - She Juncong
AU - Zhang Yu
AU - Deng Shaozhi
TI - A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor
JO - Carbon Letters
PY - 2026
VL - 36
IS - 1
PB - Korean Carbon Society
SP - 397
EP - 405
SN - 1976-4251
AB - Insulated gate bipolar transistor (IGBT) is a kind of power switching device owns the advantage of gate voltage control and high power capacity, while remaining the problem of potential catastrophic failures in high voltage. A novel structure of IGBT combined with a vacuum field emission transistor (VFET) and a bipolar junction transistor (BJT) was introduced which exhibits high blocking voltage, high frequency characteristics and excellent robustness toward catastrophic failure such as latch-up and gate oxide breakdown. A pulsing current overshooting effect due to the gate-cathode capacitance of VFET was observed to expedite the switching process, offering a novel approach to shorten the switching time of IGBT. Benefit from this, the field emission IGBT (FE-IGBT) was capable of operating over a broad frequency range from DC to 100 kHz. The static and dynamic characteristics of the device were reported, including a blocking voltage of 800 V, a maximum output current of 0.5 A. This work presented a new route to bloom the performance of IGBT and also created a feasibility to connect vacuum electronics device with solid-state semiconductor devices.
KW - Field emission transistor Carbon nanotube Switching device IGBT High frequency
DO - 10.1007/s42823-025-00993-5
ER -
Ding Yulong, Jiang Jun, Liang Junzhong, Qin Xiaoyu, Ke Yanlin, She Juncong, Zhang Yu and Deng Shaozhi. (2026). A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor. Carbon Letters, 36(1), 397-405.
Ding Yulong, Jiang Jun, Liang Junzhong, Qin Xiaoyu, Ke Yanlin, She Juncong, Zhang Yu and Deng Shaozhi. 2026, "A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor", Carbon Letters, vol.36, no.1 pp.397-405. Available from: doi:10.1007/s42823-025-00993-5
Ding Yulong, Jiang Jun, Liang Junzhong, Qin Xiaoyu, Ke Yanlin, She Juncong, Zhang Yu, Deng Shaozhi "A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor" Carbon Letters 36.1 pp.397-405 (2026) : 397.
Ding Yulong, Jiang Jun, Liang Junzhong, Qin Xiaoyu, Ke Yanlin, She Juncong, Zhang Yu, Deng Shaozhi. A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor. 2026; 36(1), 397-405. Available from: doi:10.1007/s42823-025-00993-5
Ding Yulong, Jiang Jun, Liang Junzhong, Qin Xiaoyu, Ke Yanlin, She Juncong, Zhang Yu and Deng Shaozhi. "A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor" Carbon Letters 36, no.1 (2026) : 397-405.doi: 10.1007/s42823-025-00993-5
Ding Yulong; Jiang Jun; Liang Junzhong; Qin Xiaoyu; Ke Yanlin; She Juncong; Zhang Yu; Deng Shaozhi. A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor. Carbon Letters, 36(1), 397-405. doi: 10.1007/s42823-025-00993-5
Ding Yulong; Jiang Jun; Liang Junzhong; Qin Xiaoyu; Ke Yanlin; She Juncong; Zhang Yu; Deng Shaozhi. A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor. Carbon Letters. 2026; 36(1) 397-405. doi: 10.1007/s42823-025-00993-5
Ding Yulong, Jiang Jun, Liang Junzhong, Qin Xiaoyu, Ke Yanlin, She Juncong, Zhang Yu, Deng Shaozhi. A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor. 2026; 36(1), 397-405. Available from: doi:10.1007/s42823-025-00993-5
Ding Yulong, Jiang Jun, Liang Junzhong, Qin Xiaoyu, Ke Yanlin, She Juncong, Zhang Yu and Deng Shaozhi. "A high frequency insulated gate bipolar transistor (IGBT) structure using carbon nanotube vacuum field emission transistor" Carbon Letters 36, no.1 (2026) : 397-405.doi: 10.1007/s42823-025-00993-5
