@article{ART000906827},
author={JwayeonKim and ByungchulCho and SanghoonChai and HeonchangKim and KyeongsoonPark},
title={Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2002},
volume={12},
number={6},
pages={283-287}
TY - JOUR
AU - JwayeonKim
AU - ByungchulCho
AU - SanghoonChai
AU - HeonchangKim
AU - KyeongsoonPark
TI - Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2002
VL - 12
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 283
EP - 287
SN - 1225-1429
AB -
KW -
DO -
UR -
ER -
JwayeonKim, ByungchulCho, SanghoonChai, HeonchangKim and KyeongsoonPark. (2002). Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate. Journal of the Korean Crystal Growth and Crystal Technology, 12(6), 283-287.
JwayeonKim, ByungchulCho, SanghoonChai, HeonchangKim and KyeongsoonPark. 2002, "Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate", Journal of the Korean Crystal Growth and Crystal Technology, vol.12, no.6 pp.283-287.
JwayeonKim, ByungchulCho, SanghoonChai, HeonchangKim, KyeongsoonPark "Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate" Journal of the Korean Crystal Growth and Crystal Technology 12.6 pp.283-287 (2002) : 283.
JwayeonKim, ByungchulCho, SanghoonChai, HeonchangKim, KyeongsoonPark. Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate. 2002; 12(6), 283-287.
JwayeonKim, ByungchulCho, SanghoonChai, HeonchangKim and KyeongsoonPark. "Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate" Journal of the Korean Crystal Growth and Crystal Technology 12, no.6 (2002) : 283-287.
JwayeonKim; ByungchulCho; SanghoonChai; HeonchangKim; KyeongsoonPark. Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate. Journal of the Korean Crystal Growth and Crystal Technology, 12(6), 283-287.
JwayeonKim; ByungchulCho; SanghoonChai; HeonchangKim; KyeongsoonPark. Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate. Journal of the Korean Crystal Growth and Crystal Technology. 2002; 12(6) 283-287.
JwayeonKim, ByungchulCho, SanghoonChai, HeonchangKim, KyeongsoonPark. Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate. 2002; 12(6), 283-287.
JwayeonKim, ByungchulCho, SanghoonChai, HeonchangKim and KyeongsoonPark. "Characteristic of Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate" Journal of the Korean Crystal Growth and Crystal Technology 12, no.6 (2002) : 283-287.
