@article{ART000906899},
author={Soon-HyukHong and Kwang-YellSeo},
title={Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2002},
volume={12},
number={6},
pages={304-310}
TY - JOUR
AU - Soon-HyukHong
AU - Kwang-YellSeo
TI - Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2002
VL - 12
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 304
EP - 310
SN - 1225-1429
AB -
KW -
DO -
UR -
ER -
Soon-HyukHong and Kwang-YellSeo. (2002). Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics. Journal of the Korean Crystal Growth and Crystal Technology, 12(6), 304-310.
Soon-HyukHong and Kwang-YellSeo. 2002, "Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics", Journal of the Korean Crystal Growth and Crystal Technology, vol.12, no.6 pp.304-310.
Soon-HyukHong, Kwang-YellSeo "Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics" Journal of the Korean Crystal Growth and Crystal Technology 12.6 pp.304-310 (2002) : 304.
Soon-HyukHong, Kwang-YellSeo. Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics. 2002; 12(6), 304-310.
Soon-HyukHong and Kwang-YellSeo. "Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics" Journal of the Korean Crystal Growth and Crystal Technology 12, no.6 (2002) : 304-310.
Soon-HyukHong; Kwang-YellSeo. Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics. Journal of the Korean Crystal Growth and Crystal Technology, 12(6), 304-310.
Soon-HyukHong; Kwang-YellSeo. Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics. Journal of the Korean Crystal Growth and Crystal Technology. 2002; 12(6) 304-310.
Soon-HyukHong, Kwang-YellSeo. Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics. 2002; 12(6), 304-310.
Soon-HyukHong and Kwang-YellSeo. "Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics" Journal of the Korean Crystal Growth and Crystal Technology 12, no.6 (2002) : 304-310.
