@article{ART000911009},
author={Seong-JooJang and Ju-HoonPark},
title={Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2003},
volume={13},
number={6},
pages={290-296}
TY - JOUR
AU - Seong-JooJang
AU - Ju-HoonPark
TI - Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2003
VL - 13
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 290
EP - 296
SN - 1225-1429
AB -
KW -
DO -
UR -
ER -
Seong-JooJang and Ju-HoonPark. (2003). Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition. Journal of the Korean Crystal Growth and Crystal Technology, 13(6), 290-296.
Seong-JooJang and Ju-HoonPark. 2003, "Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition", Journal of the Korean Crystal Growth and Crystal Technology, vol.13, no.6 pp.290-296.
Seong-JooJang, Ju-HoonPark "Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition" Journal of the Korean Crystal Growth and Crystal Technology 13.6 pp.290-296 (2003) : 290.
Seong-JooJang, Ju-HoonPark. Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition. 2003; 13(6), 290-296.
Seong-JooJang and Ju-HoonPark. "Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition" Journal of the Korean Crystal Growth and Crystal Technology 13, no.6 (2003) : 290-296.
Seong-JooJang; Ju-HoonPark. Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition. Journal of the Korean Crystal Growth and Crystal Technology, 13(6), 290-296.
Seong-JooJang; Ju-HoonPark. Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition. Journal of the Korean Crystal Growth and Crystal Technology. 2003; 13(6) 290-296.
Seong-JooJang, Ju-HoonPark. Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition. 2003; 13(6), 290-296.
Seong-JooJang and Ju-HoonPark. "Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemical vapor deposition" Journal of the Korean Crystal Growth and Crystal Technology 13, no.6 (2003) : 290-296.
