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Preparation of epitaxial bismuth titanate thin films by the sol-gel process

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2003, 13(2), pp.56-62
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : October 23, 2002
  • Accepted : March 31, 2003

Kim Sang Bok 1 Young Hwan -Lee 2 Yeon-Hum Yun 1 Hwang Kyu Seog 1 Jung-Sun Oh 3 KIMBYUNGHOON 4

1남부대학교
2전남과학대학교
3조선대학교
4전남대학교

Accredited

ABSTRACT

Epitaxial Bi4Ti3O12 films on SrTiO3(100), L$aA1O_3$(100) and MgO(100) were prepared by sol-gel process using metal naphthenate as a starting material. As-deposited films were pyrolyzed at 500℃ for 10 min In air and annealed at 750℃ for 30 min in air. Crystallinity and in-plane alignment of the film were investigated by X-ray diffraction θ-2θ scan and P scanning. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. The film prepared on MgO(100) showed the most poor crystallinity and in-plane alignment, compared to those on the other substrates. While the films on $LaA1O_3$(100) and SrTiO3(100) having high crystallinity and in-plane alignment showed the form of columnar grain growth, the film on MgO(100) which had poor crystallinity showed the form of acicula grain growth.

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