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Synthesis and characterization of GaN nanoparticles by pulsed laser deposition

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2003, 13(2), pp.79-82
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : February 10, 2003
  • Accepted : February 28, 2003

Cheong-Hyun Rho 1 Seung Hwan Shim 1 Jong-Won Yoon 2 Naoto Koshizaki 2 Young Ju Park 3 Kwang Bo Shim 1

1한양대학교
2AIST
3한국과학기술연구원

Accredited

ABSTRACT

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on SiO 2 substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted

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