@article{ART000911959},
author={KwangjoonHong and SeungnamBaek},
title={Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2003},
volume={13},
number={3},
pages={105-110}
TY - JOUR
AU - KwangjoonHong
AU - SeungnamBaek
TI - Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2003
VL - 13
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 105
EP - 110
SN - 1225-1429
AB -
KW -
DO -
UR -
ER -
KwangjoonHong and SeungnamBaek. (2003). Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 13(3), 105-110.
KwangjoonHong and SeungnamBaek. 2003, "Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy", Journal of the Korean Crystal Growth and Crystal Technology, vol.13, no.3 pp.105-110.
KwangjoonHong, SeungnamBaek "Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 13.3 pp.105-110 (2003) : 105.
KwangjoonHong, SeungnamBaek. Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy. 2003; 13(3), 105-110.
KwangjoonHong and SeungnamBaek. "Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 13, no.3 (2003) : 105-110.
KwangjoonHong; SeungnamBaek. Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 13(3), 105-110.
KwangjoonHong; SeungnamBaek. Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology. 2003; 13(3) 105-110.
KwangjoonHong, SeungnamBaek. Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy. 2003; 13(3), 105-110.
KwangjoonHong and SeungnamBaek. "Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 13, no.3 (2003) : 105-110.
