@article{ART000912135},
author={Jeong-Hyun Rho and Park Young Ju and Tae Gyoung Lee and Kwang Bo Shim},
title={The effect of the processing parameters on the growth of GaN thick films by a sublimation technique},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2003},
volume={13},
number={5},
pages={235-240}
TY - JOUR
AU - Jeong-Hyun Rho
AU - Park Young Ju
AU - Tae Gyoung Lee
AU - Kwang Bo Shim
TI - The effect of the processing parameters on the growth of GaN thick films by a sublimation technique
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2003
VL - 13
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 235
EP - 240
SN - 1225-1429
AB - The development of large area GaN substrates is one of important issues in expanding of GaN-based applications. In order to investigate the possibility, GaN thick films were grown by a sublimation technique, using MOCVD-GaN films grown on a sapphire as a seed-crystal substrate and a commercial GaN powder as a source material. The pressure in chamber under the fixed flow rate of N 2 gas and NH 3 gas was kept at 1 atmosphere and the effects of the various processing parameters such as the distance between source material and seed crystal, the temperature of top- and bottom heater and the growth time during the growth of GaN thick film were investigated. The growth feature and microstructure of the GaN thick films were observed by SEM and XRD. The optical bandgap properties and the defects were evaluated by the PL measurement. By these results, the growth conditions such as the distance between the GaN source and the seed substrate, the growth temperature and the growth time were determined for the satisfied growth of GaN thick films.
KW - GaN thick films . Sublimation technique . SEM . XRD . PL
DO -
UR -
ER -
Jeong-Hyun Rho, Park Young Ju, Tae Gyoung Lee and Kwang Bo Shim. (2003). The effect of the processing parameters on the growth of GaN thick films by a sublimation technique. Journal of the Korean Crystal Growth and Crystal Technology, 13(5), 235-240.
Jeong-Hyun Rho, Park Young Ju, Tae Gyoung Lee and Kwang Bo Shim. 2003, "The effect of the processing parameters on the growth of GaN thick films by a sublimation technique", Journal of the Korean Crystal Growth and Crystal Technology, vol.13, no.5 pp.235-240.
Jeong-Hyun Rho, Park Young Ju, Tae Gyoung Lee, Kwang Bo Shim "The effect of the processing parameters on the growth of GaN thick films by a sublimation technique" Journal of the Korean Crystal Growth and Crystal Technology 13.5 pp.235-240 (2003) : 235.
Jeong-Hyun Rho, Park Young Ju, Tae Gyoung Lee, Kwang Bo Shim. The effect of the processing parameters on the growth of GaN thick films by a sublimation technique. 2003; 13(5), 235-240.
Jeong-Hyun Rho, Park Young Ju, Tae Gyoung Lee and Kwang Bo Shim. "The effect of the processing parameters on the growth of GaN thick films by a sublimation technique" Journal of the Korean Crystal Growth and Crystal Technology 13, no.5 (2003) : 235-240.
Jeong-Hyun Rho; Park Young Ju; Tae Gyoung Lee; Kwang Bo Shim. The effect of the processing parameters on the growth of GaN thick films by a sublimation technique. Journal of the Korean Crystal Growth and Crystal Technology, 13(5), 235-240.
Jeong-Hyun Rho; Park Young Ju; Tae Gyoung Lee; Kwang Bo Shim. The effect of the processing parameters on the growth of GaN thick films by a sublimation technique. Journal of the Korean Crystal Growth and Crystal Technology. 2003; 13(5) 235-240.
Jeong-Hyun Rho, Park Young Ju, Tae Gyoung Lee, Kwang Bo Shim. The effect of the processing parameters on the growth of GaN thick films by a sublimation technique. 2003; 13(5), 235-240.
Jeong-Hyun Rho, Park Young Ju, Tae Gyoung Lee and Kwang Bo Shim. "The effect of the processing parameters on the growth of GaN thick films by a sublimation technique" Journal of the Korean Crystal Growth and Crystal Technology 13, no.5 (2003) : 235-240.
