@article{ART000955867},
author={Moon,Jong-Dae},
title={Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2005},
volume={15},
number={1},
pages={1-9}
TY - JOUR
AU - Moon,Jong-Dae
TI - Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2005
VL - 15
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 9
SN - 1225-1429
AB - A stoichiometric mixture of evaporating materials for AgGaS2 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590oC and 440oC, respectively. The temperature dependence of the energy band gap of the AgGaS2 obtained from the absorption spectra was well described by the Varshni’s relation, Eg(T) = 2.7284 eV . (8.695×10.4 eV/K)T2/(T + 332 K).After the as-grown AgGaS2 single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point
defects of AgGaS2 single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native
defects of VAg, VS, Agint, and Sint obtained by PL measurements were classified as a donors or acceptors type. And we
concluded that the heat-treatment in the Ag-atmosphere converted AgGaS2 single crystal thin films to an optical n-type.
Also, we confirmed that Ga in AgGaS2/GaAs crystal thin films did not form the native defects because Ga in AgGaS2
single crystal thin films existed in the form of stable bonds.
KW - Point defect;Hot wall epitaxy;Single crystal thin film;Thermal annealing;Photoluminescence
DO -
UR -
ER -
Moon,Jong-Dae. (2005). Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 15(1), 1-9.
Moon,Jong-Dae. 2005, "Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy", Journal of the Korean Crystal Growth and Crystal Technology, vol.15, no.1 pp.1-9.
Moon,Jong-Dae "Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 15.1 pp.1-9 (2005) : 1.
Moon,Jong-Dae. Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy. 2005; 15(1), 1-9.
Moon,Jong-Dae. "Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 15, no.1 (2005) : 1-9.
Moon,Jong-Dae. Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 15(1), 1-9.
Moon,Jong-Dae. Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy. Journal of the Korean Crystal Growth and Crystal Technology. 2005; 15(1) 1-9.
Moon,Jong-Dae. Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy. 2005; 15(1), 1-9.
Moon,Jong-Dae. "Growth and effect of thermal annealing for AgGaS2 single crystal thin film by hot wall epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 15, no.1 (2005) : 1-9.
