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Ferroelectric domain inversion in LiNbO3 crystal plate during heat treatment for Ti in-diffusion

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2005, 15(3), pp.124-127
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Woo Seok Yang 1 YOON, DAEHO 2 Lee Han Young 1 이형만 1 권순우 3 김우경 1

1전자부품연구원
2성균관대학교
3한국항공대학교

Accredited

ABSTRACT

It is demonstrated that the annealing process for Ti in-diffusion to z-cut LiNbO3 at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of LiNbO3 in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about 1.6mm. Also, for the etched LiNbO3 surface the domain shape was observed by the optical microscope and atomic force microscopy (AFM), and distribution of the cation concentrations in the LiNbO3 crystal by the secondary ion mass spectrometry (SIMS).

Citation status

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