본문 바로가기
  • Home

Magnetic field effects of silicon melt motion in czochralski crystal puller

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2005, 15(4), pp.129-134
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Lee,Jae-Hee 1

1경일대학교

Accredited

ABSTRACT

A numerical analysis was performed on magnetic field effects of silicon melt motion in Czochralski crystalpuller. The turbulent modeling was used to simulate the transport phenomena in 8" single crystal growing proces. Forsmall crucible angular velocity, the natural convection is dominant. As the crucible angular velocity increase, the forcedthe natural and forced convection near the crucible and the temperature profiles of the silicon fluids is similar to the caseof conduction.Key words Magnetic field effects, Czochralski crystal puller, Transport phenomena, Single crystal growing process,Natural convection, Forced convection, Temperature profiles, Silicon fluids, Conduction

Citation status

* References for papers published after 2023 are currently being built.