본문 바로가기
  • Home

Growth of CuGaSe2 single crystal thin film for solar cell development and its solar cell application

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2005, 15(6), pp.252-259
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Yun,Suk-Jin 1 Kwang Joon Hong 1

1조선대학교

Accredited

ABSTRACT

Single crystal CuGaSe2 layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 450oC with hot wall epitaxy (HWE) system by evaporating CuGaSe2 source at 610oC. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal CuGaSe2 thin films measured with Hall effect by Van der Pauw method are 4.87?017 cm-3 and 129 cm2/V톝 at 293 K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni뭩 relation, Eg(T) = 1.7998 eV - (8.7489?0-4 eV/K)T2/(T + 335 K). The voltage, current density of maxiumun power, fill factor, and conversion efficiency of n-CdS/p-CuGaSe2 heterojunction solar cells under 80 mW/cm2 illumination were found to be 0.41 V, 21.8 mA/cm2, 0.75 and 11.17 %, respectively.

Citation status

* References for papers published after 2023 are currently being built.