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Optical properties of SiO2 and TiO2 thin films deposited by electron beam process with and withoution-beam source

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2007, 17(4), pp.145-150
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

송명근 1 YOON, DAEHO 2 Yo-Seung Song 1 Lee Han Young 3 Woo Seok Yang 3 권순우 2 이형만 3 김우경 3

1한국항공대학교
2성균관대학교
3전자부품연구원

Accredited

ABSTRACT

The SiO2 and TiO2 thin films for the multilayer interference filter application were manufactured by electron beam process. In case of electron beam process with ion source, the anode current was controlled by gas volume ratio of O2 and Ar. Substrate temperature of electron beam deposition without ion source was increased from 100 to 250oC with 50oC increment. The surface roughness values of SiO2 thin films was most low value at 200 oC substrate temperature and 0.2 A anode current respectively. And the surface roughness values of TiO2 thin films was most low value at room temperature and 0.2 A anode current repectively. The refractive index of SiO2 and TiO2 thin films to be deposited with ion source was usually lower than that of thin films without ion source.

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